Optical And Structural Characteristics Of Sn-doped ZnS Thin Films For Sensing H2 Gas

This study explores the synthesis, structural, and electronic modifications of zinc sulfide (ZnS) thin films doped with tin (Sn) for enhanced functionality in optoelectronic and gas-sensing applications. Utilizing the spray pyrolysis technique, ZnS thin films were doped with varying Sn concentrations (10-25%) to evaluate the influence of Sn on crystallinity and sensitivity properties. Structural and morphological analyses via X-ray diffraction (XRD), FE-SEM and EDX revealed that Sn doping enhances crystallite size and reduces lattice defects, while Fourier-transform infrared (FTIR) spectroscopy confirmed successful incorporation of Sn within the ZnS lattice. Also, gas sensor tests conducted exclusively with 25% Sn-doped ZnS films showed heightened sensitivity and faster response times to H2, suggesting their potential for efficient and durable gas-sensing applications. These findings underscore the suitability of 25% Sn-doped ZnS thin films for advanced sensor and optoelectronic devices. In conclusion, High-performance gas sensor devices with Sn-doped ZnS Thin Films were obtained by optimizing the preparation conditions. Gas-sensing evaluations indicated that Sn-doped ZnS films showed higher sensitivity and faster response times compared to undoped ZnS, making them suitable candidates for responsive and durable gas sensors.