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First-principles study of the Mn-alloyed Cr2Ge2Te6 monolayer: Intrinsic ferromagnet with robust half-metallicity and large magnetic anisotropy energy
被引:0
|作者:
Wang, Xu-li
[1
]
Chen, Hua
[1
]
Xie, Jing-jing
[1
]
Yan, Ling
[1
]
Zhang, Ye-hui
[2
]
Lv, Jin
[1
]
Wang, Bing
[3
]
Wu, Hai-shun
[1
]
机构:
[1] Shanxi Normal Univ, Sch Chem & Mat Sci, Key Lab Magnet Mol, Magnet Informat Mat,Minist Educ, Taiyuan 030031, Peoples R China
[2] Southeast Univ, Sch Phys, Nanjing 211189, Peoples R China
[3] Henan Univ, Inst Computat Mat Sci, Sch Phys & Elect, Int Joint Res Lab New Energy Mat & Devices Henan P, Kaifeng 475004, Peoples R China
基金:
中国国家自然科学基金;
关键词:
Intrinsic ferromagnetic;
Non-equivalent alloying compound;
Half-metal;
Magnetic anisotropy;
2D SEMICONDUCTOR;
ELECTRIC-FIELD;
CRYSTAL;
LAYER;
TEMPERATURE;
ORDER;
D O I:
10.1016/j.comptc.2024.115057
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Two-dimensional (2D) materials with intrinsic half-metallicity and large magnetic anisotropy energy (MAE) have been a long-sought goal because of potential applications in high-performance spintronics. In this work, using first-principles calculations, we design, investigate and find that the Mn-alloyed Cr2Ge2Te6 monolayer is a half-metal with a considerable in-plane magnetic anisotropy energy (IMAE, 2.276 meV/unitcell) and a high Phase-Transition temperature (Tc/185 K), which is about 3 times higher than that of Cr2Ge2Te6 monolayer without introducing any carriers. Meanwhile, according to the second-order perturbation theory, the IMAE is revealed mainly origin from the couplings of < p(y)up arrow|L-x|p(z)down arrow > and < p(y)down arrow|L-x|p(z)up arrow > of Te atom and the couplings of < d(x)(2)-(2)(y)up arrow |L-z|d(xy)up arrow > and < d(x)(2)-(2)(y)down arrow|L-z|d(xy)down arrow > of Mn atom. Besides, the ferromagnetism of the Cr2Ge2Te6 monolayer can be further improved by tensile strains and hole doping. Our findings suggest this monolayer would be a good candidate for spintronic devices and we would provide a strategy for designing the excellent spintronic materials
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页数:9
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