Low noise low dark current AlAsSb/GaAsSb digital alloy avalanche photodiode

被引：0

作者：

Ge, Huachen ^{[1
]}

Liang, Yan ^{[2
]}

Wang, Wenyang ^{[1
]}

Wang, Zihao ^{[1
]}

Zhu, Liqi ^{[3
]}

Huang, Jian ^{[3
]}

Wang, Guowei ^{[4
]}

Wu, Donghai ^{[4
]}

Xu, Yingqiang ^{[4
]}

Niu, Zhichuan ^{[4
]}

Shi, Yi ^{[2
]}

Chen, Baile ^{[1
]}

机构：

[1] ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China

[2] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Key Lab Infrared Detect Technol, Shanghai 200083, Peoples R China

[4] Chinese Acad Sci, Inst Semicond, Key Lab Optoelect Mat & Devices, Beijing 100083, Peoples R China

来源：

OPTICS EXPRESS | 2025年 / 33卷 / 05期

基金：

中国国家自然科学基金;

关键词：

HIGH-GAIN; IMPACT IONIZATION; EXCESS NOISE; MULTIPLICATION; ALINASSB; BARRIER;

D O I：

10.1364/OE.555645

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This study introduces a digital alloy AlAsSb/GaAsSb avalanche photodiode (APD) on InP, demonstrating low dark current and low noise performance. The lattice-matched AlAsSb/GaAsSb APD structure exhibits a dark current density of 16 mu A/cm2 at a gain of 10 and an excess noise factor near 2 at room temperature, attributed to high crystal quality and effective passivation. The dark current level achieved in this work is the lowest reported for Sb-based p-i-n APDs with a 1000 nm thick intrinsic region. These results make it highly promising for separate absorption, charge, and multiplication (SACM) structures in optical communication and LIDAR applications. (c) 2025 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

引用

页码：10591 / 10598

页数：8

共 50 条

[11] InGaAs/InAlAs Avalanche Photodiode With Low Dark Current for High-Speed Operation
Xie, Shiyu
Zhang, Shiyong
Tan, Chee Hing
IEEE PHOTONICS TECHNOLOGY LETTERS, 2015, 27 (16) : 1745 - 1748
[12] Low Excess Noise AlInAsSb Staircase Avalanche Photodiode
Ren, Min
Maddox, Scott
Chan, Yaojia
Woodson, Madison
Bank, Seth
Campbell, Joe C.
2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2015, : 17 - 18
[13] Low Dark Current SWIR Photodiode with InGaAs/GaAsSb Type II Quantum Wells grown on InP Substrate
Inada, H.
Miura, K.
Nagai, Y.
Tsubokura, M.
Moto, A.
Iguchi, Y.
Kawamura, Y.
2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM), 2009, : 149 - +
[14] Low noise electronics module for avalanche photodiode signal readout
Dvornikov, O., V
Tchekhovski, V. A.
Diatlov, V. L.
DEVICES AND METHODS OF MEASUREMENTS, 2013, (02): : 42 - 46
[15] Low dark current GaN avalanche photodiodes
Yang, B
Li, T
Heng, K
Collins, C
Wang, S
Carrano, JC
Dupuis, RD
Campbell, JC
Schurman, MJ
Ferguson, IT
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (12) : 1389 - 1391
[16] AVALANCHE MULTIPLICATION AND NOISE CHARACTERISTICS OF LOW-DARK-CURRENT GAINASP-INP AVALANCHE PHOTODETECTORS
DIADIUK, V
GROVES, SH
HURWITZ, CE
APPLIED PHYSICS LETTERS, 1980, 37 (09) : 807 - 810
[17] High gain, low noise 1550 nm GaAsSb/AlGaAsSb avalanche photodiodes
Lee, S.
Jin, X.
Jung, H.
Lewis, H.
Liu, Y.
Guo, B.
Kodati, S. H.
Schwartz, M.
Grein, C.
Ronningen, T. J.
David, J. P. R.
Campbell, Joe C.
Krishna, S.
OPTICA, 2023, 10 (02): : 147 - 154
[18] ALGASB AVALANCHE PHOTODIODE EXHIBITING A VERY LOW EXCESS NOISE FACTOR
MIURA, S
MIKAWA, T
KUWATSUKA, H
YASUOKA, N
TANAHASHI, T
WADA, O
APPLIED PHYSICS LETTERS, 1989, 54 (24) : 2422 - 2423
[19] MEASUREMENTS OF NATURAL RADIATION EFFECTS IN A LOW-NOISE AVALANCHE PHOTODIODE
SWANSON, EA
ARNAU, ER
WALTHER, FG
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) : 1658 - 1661
[20] Avalanche Photodiode with High Dynamic Range, High Speed and Low Noise
Ciarrocchi, Alberto
Quan, Wei
Haemmerli, Maria
Meier, Hektor
2022 EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC), 2022,

← 1 2 3 4 5 →