Low noise low dark current AlAsSb/GaAsSb digital alloy avalanche photodiode

被引：0

作者：

Ge, Huachen ^{[1
]}

Liang, Yan ^{[2
]}

Wang, Wenyang ^{[1
]}

Wang, Zihao ^{[1
]}

Zhu, Liqi ^{[3
]}

Huang, Jian ^{[3
]}

Wang, Guowei ^{[4
]}

Wu, Donghai ^{[4
]}

Xu, Yingqiang ^{[4
]}

Niu, Zhichuan ^{[4
]}

Shi, Yi ^{[2
]}

Chen, Baile ^{[1
]}

机构：

[1] ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China

[2] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Key Lab Infrared Detect Technol, Shanghai 200083, Peoples R China

[4] Chinese Acad Sci, Inst Semicond, Key Lab Optoelect Mat & Devices, Beijing 100083, Peoples R China

来源：

OPTICS EXPRESS | 2025年 / 33卷 / 05期

基金：

中国国家自然科学基金;

关键词：

HIGH-GAIN; IMPACT IONIZATION; EXCESS NOISE; MULTIPLICATION; ALINASSB; BARRIER;

D O I：

10.1364/OE.555645

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This study introduces a digital alloy AlAsSb/GaAsSb avalanche photodiode (APD) on InP, demonstrating low dark current and low noise performance. The lattice-matched AlAsSb/GaAsSb APD structure exhibits a dark current density of 16 mu A/cm2 at a gain of 10 and an excess noise factor near 2 at room temperature, attributed to high crystal quality and effective passivation. The dark current level achieved in this work is the lowest reported for Sb-based p-i-n APDs with a 1000 nm thick intrinsic region. These results make it highly promising for separate absorption, charge, and multiplication (SACM) structures in optical communication and LIDAR applications. (c) 2025 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

引用

页码：10591 / 10598

页数：8

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