Effect of Crystal Rotation on Melt Convection and Resistivity Distribution in 200 mm Floating Zone Silicon Single Crystal Growth

Floating silicon is particularly suitable for the production of power devices and detectors due to its high purity and high resistivity. However, when the crystal diameter increases to 200 mm, the inhomogeneous distribution of dopants in the radial direction of the crystal becomes an important factor affecting the quality of the crystal. In this paper, the melt flow and crystal interface dopant distribution of 200 mm floating zone silicon under different crystal rotation modes using 2D axisymmetric models was calculated. In the simulation, the crystal rotates unidirectionally clockwise or alternates between clockwise and counterclockwise rotations and is compared with the corresponding experimental results. The results of alternate rotation show a significant improvement in the distribution of resistivity, which is explained from the perspective of melt flow, providing ideas for the industrial production of high-quality FZ silicon crystals.