High-Performance n-Type OFETs Enabled by Pyridine-Substituted Diketopyrrolopyrrole Organic Semiconductor and Elastomer Stretchable Blends

被引:0
|
作者
Kothandaraman, Rajesh [1 ]
He, Waner [2 ]
Kranthiraja, Kakaraparthi [1 ]
Manzhos, Sergei [2 ]
Mcneill, Christopher R. [3 ]
Li, Yong [4 ]
Xu, Yanan [5 ]
Fairfull-Smith, Kathryn E. [1 ]
Michinobu, Tsuyoshi [2 ]
Sonar, Prashant [1 ]
机构
[1] Queensland Univ Technol QUT, Ctr Mat Sci, Sch Chem & Phys, Brisbane 4000, Australia
[2] Inst Sci Tokyo, Sch Mat & Chem Technol, Ookayama 2-12-1,Meguro Ku, Tokyo 1528552, Japan
[3] Monash Univ, Dept Mat Sci & Engn, Wellington Rd, Clayton, Vic 3800, Australia
[4] CSIRO Energy Ctr, 10 Murray Dwyer Cct, Mayfield West, NSW 2304, Australia
[5] Queensland Univ Technol QUT, Cent Analyt Res Facil, Brisbane 4000, Australia
关键词
electron mobility; n-type organic semiconductor; pyridine-substituted diketopyrrolopyrrole; side chain; stretchable blend; vertical phase separation; POLYMER SEMICONDUCTORS; MOLECULAR DESIGN; MOBILITY; IMPACT;
D O I
10.1002/admt.202401518
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The contemporary research on developing n-type organic semiconducting materials (OSMs) has great significance for stretchable organic field-effect transistors (OFETs). Two n-type OSMs (DPPPy-C10-TN and DPPPy-C-Si-TN) based on alkyl/siloxane-substituted pyridine flanked diketopyrrolopyrrole (DPPPy) end capped with thienyl naphthalimide (TN) are reported. Although DPPPy-C10-TN and DPPPy-C-Si-TN show similar optical and electrochemical properties, they show a significant variation in their morphological and crystalline properties in pristine form or within an elastic polymer (polystyrene-block-poly(ethylene-ran-butylene)-block-polystyrene; SEBS) matrix, which further reflects on their electrical properties. Interestingly, bottom-gate top-contact OFETs of as-cast pristine DPPPy-C10-TN show a higher electron mobility (mu e = 0.103 cm2 V-1 s-1) than DPPPy-C-Si-TN (mu e = 0.0145 cm2 V-1 s-1), underscoring the influence of alkyl substitution on charge transport efficiency. By contrast, stretchable DPPPy-C-Si-TN:SEBS blend shows a significantly higher electron mobility (mu e = 0.322 cm2 V-1 s-1) in comparison to the DPPPy-C10-TN:SEBS blend (mu e = 0.00196 cm2 V-1 s-1). To the best of the authors' knowledge, this is the first successful report about a high mu e value reported for a DPPPy-based n-type small molecule stretchable OSM blend in OFETs and provides new insights into the design and processing principles of small molecule based OSMs for flexible electronics.
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页数:11
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