Aging mechanism of thermal interface materials investigated by in-situ Raman and infrared spectroscopy

the aging of thermal interface material (TIM) in advanced electronic packaging has been became a key issue along with the increase of power density in chip. The high temperature generated in the chip is easy to accelerate the aging of the TIM, which affects the reliability and service life of the electronic packaging material. Although thermal interface materials, especially silicon-based thermal interface materials, are widely used in electronic packaging structures, systematic aging studies are lacking. In this study, the aging mechanism of silicon-based TIM was studied systematically by the Raman and infrared spectroscopy. Raman or infrared spectroscopy have their own limitations in studying the aging mechanism of TIM. Only by combining them can richer molecular information and more accurate aging mechanism be obtained. Moreover, a spectroscopic method for rapid nondestructive detection of aging degree of TIM was developed.