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- [32] High-Quality Hexagonal Boron Nitride from 2D DistillationACS NANO, 2021, 15 (01) : 1351 - 1357Cun, Huanyao论文数: 0 引用数: 0 h-index: 0机构: Univ Zurich, Phys Inst, CH-8057 Zurich, Switzerland Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R ChinaMiao, Zichun论文数: 0 引用数: 0 h-index: 0机构: Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R ChinaHemmi, Adrian论文数: 0 引用数: 0 h-index: 0机构: Univ Zurich, Phys Inst, CH-8057 Zurich, Switzerland Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R ChinaAl-Hamdani, Yasmine论文数: 0 引用数: 0 h-index: 0机构: Univ Zurich, Dept Chem, CH-8057 Zurich, Switzerland Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R ChinaIannuzzi, Marcella论文数: 0 引用数: 0 h-index: 0机构: Univ Zurich, Dept Chem, CH-8057 Zurich, Switzerland Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R ChinaOsterwalder, Juerg论文数: 0 引用数: 0 h-index: 0机构: Univ Zurich, Phys Inst, CH-8057 Zurich, Switzerland Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R ChinaAltman, Michael S.论文数: 0 引用数: 0 h-index: 0机构: Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China论文数: 引用数: h-index:机构:
- [33] Mechanism of Soft and Hard Breakdown in Hexagonal Boron Nitride 2D Dielectrics2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2018,Ranjan, A.论文数: 0 引用数: 0 h-index: 0机构: Singapore Univ Technol & Design, Engn Prod Dev, Singapore 487372, Singapore ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way, Singapore 138634, Singapore Singapore Univ Technol & Design, Engn Prod Dev, Singapore 487372, SingaporeRaghavan, N.论文数: 0 引用数: 0 h-index: 0机构: Singapore Univ Technol & Design, Engn Prod Dev, Singapore 487372, Singapore Singapore Univ Technol & Design, Engn Prod Dev, Singapore 487372, SingaporeO'Shea, S. J.论文数: 0 引用数: 0 h-index: 0机构: ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way, Singapore 138634, Singapore Singapore Univ Technol & Design, Engn Prod Dev, Singapore 487372, SingaporeMei, S.论文数: 0 引用数: 0 h-index: 0机构: Singapore Univ Technol & Design, Engn Prod Dev, Singapore 487372, Singapore ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way, Singapore 138634, Singapore Singapore Univ Technol & Design, Engn Prod Dev, Singapore 487372, SingaporeBosman, M.论文数: 0 引用数: 0 h-index: 0机构: ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way, Singapore 138634, Singapore Singapore Univ Technol & Design, Engn Prod Dev, Singapore 487372, SingaporeShubhakar, K.论文数: 0 引用数: 0 h-index: 0机构: Singapore Univ Technol & Design, Engn Prod Dev, Singapore 487372, Singapore Singapore Univ Technol & Design, Engn Prod Dev, Singapore 487372, SingaporePey, K. L.论文数: 0 引用数: 0 h-index: 0机构: Singapore Univ Technol & Design, Engn Prod Dev, Singapore 487372, Singapore Singapore Univ Technol & Design, Engn Prod Dev, Singapore 487372, Singapore
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- [35] Stacking and Registry Effects in Layered Materials: The Case of Hexagonal Boron NitridePHYSICAL REVIEW LETTERS, 2010, 105 (04)Marom, Noa论文数: 0 引用数: 0 h-index: 0机构: Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, IsraelBernstein, Jonathan论文数: 0 引用数: 0 h-index: 0机构: Tel Aviv Univ, Sch Chem, Sackler Fac Exact Sci, IL-69978 Tel Aviv, Israel Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, IsraelGarel, Jonathan论文数: 0 引用数: 0 h-index: 0机构: Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, IsraelTkatchenko, Alexandre论文数: 0 引用数: 0 h-index: 0机构: Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:Hod, Oded论文数: 0 引用数: 0 h-index: 0机构: Tel Aviv Univ, Sch Chem, Sackler Fac Exact Sci, IL-69978 Tel Aviv, Israel Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel
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- [39] Random telegraph noise in 2D hexagonal boron nitride dielectric filmsAPPLIED PHYSICS LETTERS, 2018, 112 (13)Ranjan, A.论文数: 0 引用数: 0 h-index: 0机构: Singapore Univ Technol & Design, 8 Somapah Rd, Singapore 487372, Singapore Inst Mat Res & Engn, A STAR, 2 Fusionopolis Way, Singapore 138634, Singapore Singapore Univ Technol & Design, 8 Somapah Rd, Singapore 487372, SingaporePuglisi, F. M.论文数: 0 引用数: 0 h-index: 0机构: Univ Modena & Reggio Emilia, DIEF, Via P Vivarelli 10-1, I-42125 Modena, Italy Singapore Univ Technol & Design, 8 Somapah Rd, Singapore 487372, SingaporeRaghavan, N.论文数: 0 引用数: 0 h-index: 0机构: Singapore Univ Technol & Design, 8 Somapah Rd, Singapore 487372, Singapore Singapore Univ Technol & Design, 8 Somapah Rd, Singapore 487372, SingaporeO'Shea, S. J.论文数: 0 引用数: 0 h-index: 0机构: Inst Mat Res & Engn, A STAR, 2 Fusionopolis Way, Singapore 138634, Singapore Singapore Univ Technol & Design, 8 Somapah Rd, Singapore 487372, SingaporeShubhakar, K.论文数: 0 引用数: 0 h-index: 0机构: Singapore Univ Technol & Design, 8 Somapah Rd, Singapore 487372, Singapore Singapore Univ Technol & Design, 8 Somapah Rd, Singapore 487372, SingaporePavan, P.论文数: 0 引用数: 0 h-index: 0机构: Univ Modena & Reggio Emilia, DIEF, Via P Vivarelli 10-1, I-42125 Modena, Italy Singapore Univ Technol & Design, 8 Somapah Rd, Singapore 487372, SingaporePadovani, A.论文数: 0 引用数: 0 h-index: 0机构: MDLsoft Inc, 5201 Great Amer Pkwy,Suite 320, Santa Clara, CA 95054 USA Singapore Univ Technol & Design, 8 Somapah Rd, Singapore 487372, SingaporeLarcher, L.论文数: 0 引用数: 0 h-index: 0机构: Univ Modena & Reggio Emilia, DISMI, Via Amendola 2, I-42122 Reggio Emilia, Italy Singapore Univ Technol & Design, 8 Somapah Rd, Singapore 487372, SingaporePey, K. L.论文数: 0 引用数: 0 h-index: 0机构: Singapore Univ Technol & Design, 8 Somapah Rd, Singapore 487372, Singapore Singapore Univ Technol & Design, 8 Somapah Rd, Singapore 487372, Singapore
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