Thickness Dependence of Unidirectional Magnetoresistance in Co2MnGa Films

被引:0
|
作者
Rong, Bin [1 ,6 ]
Ren, Lizhu [2 ]
Zheng, Hongsheng [1 ,6 ]
Liu, Liang [3 ,4 ,5 ]
Yang, Yumeng [1 ,6 ]
机构
[1] ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
[3] Shanghai Jiao Tong Univ, Sch Phys & Astron, Key Lab Artificial Struct & Quantum Control, Minist Educ,TD Lee Inst, Shanghai 200240, Peoples R China
[4] Hefei Natl Lab, Hefei 230088, Peoples R China
[5] Shanghai Res Ctr Quantum Sci, 99 Xiupu Rd, Shanghai 201315, Peoples R China
[6] ShanghaiTech Univ, Shanghai Engn Res Ctr Energy Efficient & Custom I, Shanghai 201210, Peoples R China
关键词
Co2MnGa; Unidirectional magnetoresistance; Anomalous Nernst effect; Thickness dependence;
D O I
10.1109/INTERMAGSHORTPAPERS61879.2024.10576905
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
With intrinsic giant anomalous Hall and Nernst effects, Weyl ferromagnet Co2MnGa stands as an ideal candidate for exploring efficient charge-to-spin conversions. In this work, by utilizing the high-quality epitaxial Co2MnGa single films, we observed a sizable unidirectional magnetoresistance. Surprisingly, the isotropic crystallographic axis dependence of unidirectional magnetoresistance, together with its linear scaling to the Co2MnGa thickness, neither can be explained by the conventional spin current drift-diffusion process. By employing heat equation, we analytically derived the current induced vertical temperature gradient, and unambiguously show the thickness dependence of unidirectional magnetoresistance induced by anomalous Nernst effects. Our work provides direct evidences of thermoelectric voltages in the nonlinear transport that may be extended to other material systems as well.
引用
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页数:2
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