Mechanical and electrical properties of α-MoO3 belts under strain for flexible electronics applications

被引:0
|
作者
Ma, Kihyun [1 ]
Kim, Sanghun [1 ]
Kim, Ho Yeon [2 ]
Seo, Intae [2 ]
Han, Seung Ho [2 ]
Shin, Seungyong [3 ]
Jang, Ho Seong [3 ]
Kim, Dong Hun [1 ]
机构
[1] Myongji Univ, Dept Mat Sci & Engn, Yongin, South Korea
[2] Korea Elect Technol Inst KETI, Elect Convergence Mat & Devices Res Ctr, Seongnam, South Korea
[3] Korea Inst Sci & Technol KIST, Mat Architecturing Res Ctr, Seoul, South Korea
基金
新加坡国家研究基金会;
关键词
alpha-MoO; 3; belts; Flexible electronics; Strain induced current; CoFe (2) O (4) thin films; Magnetic anisotropy; COFE2O4; THIN-FILMS; HETEROGENEOUS INTEGRATION; EPITAXIAL-GROWTH; MOO3; COERCIVITY;
D O I
10.1016/j.apsusc.2024.161512
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This study investigated a straightforward and cost-effective method for synthesizing alpha-MoO3 belts and evaluated their potential as substrates for flexible electronic devices. Transparent alpha-MoO3 belts, featuring millimeter-scale side lengths and micrometer-scale thicknesses, were produced through a one-step sintering process using metallic molybdenum powder. When affixed to stretchable substrates, the alpha-MoO3 belts demonstrated robust mechanical stability under continuous and sustained tensile strain in the longitudinal direction. The belts exhibited a transmittance exceeding 68 % in the visible and near-infrared light regions. The current between gold dots on belts fixed to a stretchable polydimethylsiloxane substrate increased with the application of tensile strain. Furthermore, a CoFe2O4 thin film deposited at elevated temperature onto an alpha-MoO3 belt exhibited significant magnetic anisotropy. These findings introduce a novel and efficient approach for fabricating highly crystalline thin films on stretchable and bendable substrates using alpha-MoO3 belts.
引用
收藏
页数:8
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