Low-Temperature Contacts and the Coulomb Blockade Effect in Layered Nanoribbons with In-Plane Anisotropy

One-dimensional (1D) nanoribbons (NRs) constitute rapidly advancing nanotechnology with significant potential for emerging applications such as quantum sensing and metrology. TiS3 nanoribbons exhibit strong in-plane crystal anisotropy, enabling robust 1D confinement and resilience to edge disorder. Nevertheless, charge transport in 1D TiS3 remains relatively unexplored, particularly at low temperatures, where high contact resistance impacts device performance and fundamentally limits its applications. Here, we engineer electrical contacts between a bulk metal and a 1D NR and explore the low-temperature characteristics of the 1D field-effect devices. We report ohmic contacts for 1D TiS3 with temperature-independent contact resistances as low as 2.7 +/- 0.3 k Omega<middle dot>mu m, enabling the study of charge transport at low temperatures (down to 35 mK) and clear observation of the Coulomb blockade effect. We demonstrate single-electron transport in 1D TiS3 and perform excited state spectroscopy and magnetospectroscopy, extracting an out-of-plane electron g-factor, g = 1.8 +/- 0.3.