Temperature Dependence of Bilinear Magnetoelectric Resistance (BMR) in Topological Insulator Bi2Se3

In this study, we investigate the Bilinear Magnetoelectric Resistance (BMR) phenomenon in the topological insulator Bi(2)Se(3 )grown on a (100) GaAs substrate. By varying the sample temperature from 10 K to 60 K, we measured the out-of-plane tilt angle of the spin texture induced by Rashba spin-orbit coupling (ROC). Through BMR measurements, we extracted the parameter lambda, which quantifies the strength of hexagonal warping influencing the Rashba spin-orbit coupling. To examine the relationship between lambda and the Fermilevel electron density, we calculated the two-dimensional electron density using Hall effect measurements over the same temperature range. A significant correlation between lambda and electron density was observed at low temperatures. These experimental findings suggest that the spin-momentum locking phenomenon in topological insulators is strongly influenced by temperature-dependent variations in electron density