RF GaN-on-Si Technology Powers the Future of Wireless

被引：0
|
作者：
Schulze, Johannes [1 ]
Singerl, Peter [1 ]
机构：
[1] Infineon, Neubiberg, Germany
来源：
MICROWAVE JOURNAL | 2024年 / 67卷 / 11期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页数：116
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