High-performance solar-blind UV bipolar junction phototransistor based on a vertical Pt/Ga2O3/p-Si Schottky emitter structure

Solar-blind UV photodetectors are extensively applied in both military and civilian domains. In this work, a high-performance Pt/Ga2O3/p-Si Schottky emitter solar-blind UV bipolar junction phototransistor is demonstrated. It exhibits a peak responsivity (@246 nm) of 1632.8 A/W under a bias of 5 V. This responsivity is significantly enhanced compared to the Al/Ga2O3/p-Si heterojunction photodetector, while its response speed remains largely unchanged. Additionally, the device demonstrates excellent solar-blind UV spectral selectivity, with a solar-blind UV to visible-blind UV rejection ratio (R-246 nm/R-365 nm) reaching 2.4x10(4). This work provides new insights into the design and fabrication of high-performance Ga2O3-based solar-blind UV photodetectors.