Emission Ellipsometry Study in Polymeric Interfaces Based on Poly(3-Hexylthiophene), [6,6]-Phenyl-C61-Butyric Acid Methyl Ester, and Reduced Graphene Oxide
We analyzed the interaction of three materials, reduced graphene oxide (RGO), [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), and poly(3-hexylthiphene) (P3HT), as well as the dependence of its photophysical properties within the temperature range of 90 to 300 K. The nanocomposite of the films was analyzed by optical absorption ultraviolet-visible (UV-Vis) and photoluminescence (PL) and emission ellipsometry (EE) as a function of sample temperature. The surface morphology was studied by atomic force microscopy (AFM). We noted that onset levels (E-onset) of the nanocomposite of P3HT and RGO are smaller than the others. The PL spectra showed the presence of anomalies in the emission intensities in the nanocomposite of P3HT and PCBM. It was also possible to determine the electron-phonon coupling by calculating the Huang-Rhys parameters and the temperature dependence of samples. Through EE, it was possible to analyze the degree of polarization and the anisotropy. We observed a high degree of polarized emission of the P3HT films, which varies subtly according to the temperature. For nanocomposites with RGO, the polarization degree in the emission decreases, and the roughness on the surface increases. As a result, the RGO improves the energy transfer between adjacent polymer chains at the cost of greater surface roughness. Then, the greater energy transfer may favor applications of this type of nanocomposite in organic photovoltaic cells (OPVCs) with enhancement in energy conversion efficiency.
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Chongqing Univ Arts & Sci, Res Inst New Mat Technol, Chongqing 402160, Peoples R ChinaChongqing Univ Arts & Sci, Res Inst New Mat Technol, Chongqing 402160, Peoples R China
Hu, Rong
Liu, Yurong
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Chongqing Univ Arts & Sci, Res Inst New Mat Technol, Chongqing 402160, Peoples R ChinaChongqing Univ Arts & Sci, Res Inst New Mat Technol, Chongqing 402160, Peoples R China
Liu, Yurong
Cheng, Jiang
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Chongqing Univ Arts & Sci, Res Inst New Mat Technol, Chongqing 402160, Peoples R ChinaChongqing Univ Arts & Sci, Res Inst New Mat Technol, Chongqing 402160, Peoples R China
Cheng, Jiang
Chen, Yingmin
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Chongqing Univ Arts & Sci, Coll Mus, Chongqing 402160, Peoples R ChinaChongqing Univ Arts & Sci, Res Inst New Mat Technol, Chongqing 402160, Peoples R China
Chen, Yingmin
Zhang, Wei
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Guangzhou Univ, Sch Phys & Elect Engn, Guangzhou 510006, Guangdong, Peoples R ChinaChongqing Univ Arts & Sci, Res Inst New Mat Technol, Chongqing 402160, Peoples R China
Zhang, Wei
Liu, Hongdong
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Chongqing Univ Arts & Sci, Res Inst New Mat Technol, Chongqing 402160, Peoples R ChinaChongqing Univ Arts & Sci, Res Inst New Mat Technol, Chongqing 402160, Peoples R China
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Indian Inst Technol Delhi, Ctr Energy Studies, Photovolta Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Ctr Energy Studies, Photovolta Lab, New Delhi 110016, India
Chaturvedi, Neha
Swami, Sanjay Kumar
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Indian Inst Technol Delhi, Ctr Energy Studies, Photovolta Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Ctr Energy Studies, Photovolta Lab, New Delhi 110016, India
Swami, Sanjay Kumar
Dutta, Viresh
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Indian Inst Technol Delhi, Ctr Energy Studies, Photovolta Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Ctr Energy Studies, Photovolta Lab, New Delhi 110016, India