Electrical properties of co-sputtered ZnO:Zn thin films for adaptive oxide devices

被引：0
|
作者：
Neri-Espinoza, Karen A. [1 ]
Dominguez-Crespo, Miguel A. [1 ]
Andraca-Adame, Jose A. [1 ]
Gutierrez-Galicia, Francisco [1 ]
Juarez-Amador, Lucia I. [2 ]
Pena-Sierra, Ramon [3 ]
机构：
[1] Inst Politecn Nacl IPN, Dept Nanomat, Unidad Profes Interdisciplinaria Ingn Campus Hidal, Hidalgo 42162, Mexico
[2] Univ Guadalajara, Dept Ingn Proyectos, CUCEI, Guadalajara 44410, Jalisco, Mexico
[3] Natl Polytech Inst CINVESTAV IPN, Dept Elect Engn, Secc Elect Estado Solido SEES, Ctr Res & Adv Studies, Mexico City 07360, Mexico
来源：
MRS ADVANCES | 2025年
关键词：
DOPED ZNO;
D O I：
10.1557/s43580-025-01188-w
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This study explores the synthesis, characterisation, and changes in the electrical properties of co-sputtered ZnO:Zn films for adaptive oxide devices. The films were synthesised using co-sputtering, with ZnO deposited at 150 W RF and Zn at 10, 15, and 20 W DC. X-Ray Diffraction (XRD) showed structural changes, indicating interstitial zinc incorporation in the ZnO lattice. Hall effect measurements revealed carrier concentration and mobility of the samples, while Frequency Response Analysis (FRA) examined the electrical conductivity and stability across 100 Hz-20 MHz. These properties make ZnO films promising for adaptive devices and applications such as memristors, sensors, thin-film transistors, optoelectronic devices, and conductive coatings.
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页数：6
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