Photochemical wet etching of single-crystal c-plane AlN under UV illumination

被引:0
|
作者
Park, Junghyun [1 ,2 ]
Baek, Jueun [1 ,2 ]
Baik, Kwang Hyeon [3 ]
Ren, Fan [4 ]
Pearton, Stephen J. [5 ]
Jang, Soohwan [1 ,2 ]
机构
[1] Dankook Univ, Dept Chem Engn, Yongin 16890, South Korea
[2] Dankook Univ, Dept Foundry Engn, Yongin 16890, South Korea
[3] Hongik Univ, Dept Mat Sci & Engn, Sejong 30016, South Korea
[4] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[5] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
基金
新加坡国家研究基金会;
关键词
THIN-FILMS; SUBSTRATE; BEHAVIOR; AIN; GAN;
D O I
10.1016/j.apsusc.2025.162926
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The photochemical wet etching of 2.3 mu m thick c-plane AlN single crystal layers grown on sapphire substrate was examined at elevated temperatures of 80 similar to 95 degrees C using a 0.89 M potassium hydroxide (KOH) etchant solution under ultraviolet (UV) illumination. The etch rate was determined to be 1.86 & Aring;/min. at 80 degrees C, increasing to 11.8 & Aring;/min. at 95 degrees C, with an activation energy of 1.29 eV. This is indicative of reaction-limited kinetics, and represents a giant enhancement over conventional wet etching of AlN, where no significant etching of the c-plane occurs under these conditions. The basal c-plane etches slowly in KOH under photochemical conditions, but also with extensive formation of hexagonal etch pits related to dislocations in the AlN. These etch pits had a hexagonal column and inverse pyramid shape surrounded by {101<overline>0} and {101<overline>1<overline>} planes, and in some cases the underlying sapphire was exposed during etch times in which only a few hundred angstroms of AlN were removed in the c-plane direction.
引用
收藏
页数:7
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