Investigation of the effect of varied graphene oxide additions on Bi2223 superconductor properties

被引:0
|
作者
Koohani, Hossein [1 ,2 ]
Yousefpour, Mardali [1 ]
Nouri, Nastaran Riahi [2 ]
机构
[1] Semnan Univ, Fac Mat & Met Engn, Semnan 3513119111, Iran
[2] Nirou Res Inst, Nonmet Dept, Tehran, Iran
关键词
Bi2223; Graphene oxide; Superconductivity; Characterization techniques; MECHANICAL-PROPERTIES; BI-2223; MATRIX;
D O I
10.1016/j.physb.2025.417114
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The impact of graphene oxide (GO) on the performance of high-temperature superconductors, specifically Bi2223, was examined in this study. Bi2223 samples were produced using a solid-state reaction method with different concentrations of GO. The use of GO, a two-dimensional oxide, resulted in it being a highly effective additive for Bi-based superconductors. Polyvinyl alcohol (PVA) was used to disperse the additive and as a pressing aid. The resulting samples underwent comprehensive characterization using various techniques. The results indicated that adding GO enhanced the superconducting properties of Bi2223, including increases in critical temperature, critical current density, and irreversibility field. Additionally, scanning electron microscopy images demonstrated that GO contributed to improved uniformity of the Bi2223 particles. The study incorporated varying weight percentages of GO (0.1, 0.5, 1, 1.1, and 1.5 wt%) into the Bi2223 precursor powder, with the optimal GO doping level identified as 1 wt%. Overall, this research suggests that GO can be a promising candidate to improve the performance of high-temperature superconductors, particularly Bi2223.
引用
收藏
页数:10
相关论文
共 50 条
  • [21] SUBSTITUTION EFFECT OF BA FOR SR IN BI2223 SUPERCONDUCTORS
    IKEDA, H
    YOSHIZAKI, R
    YOSHIKAWA, K
    PHYSICA B, 1994, 194 : 2205 - 2206
  • [22] Small Magnetic Hysteresis in Bi2223 Polycrystalline High-Temperature Superconductor
    Balaev, D. A.
    Semenov, S. V.
    Gokhfeld, D. M.
    Petrov, M. I.
    JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, 2024, 37 (8-10) : 1329 - 1337
  • [23] Effect of Bi2223 addition in precursor on the formation and Jc property of Bi2223 tapes sheathed with the Ag-Cu alloy
    Nakamura, Yuichi
    Torii, Naoyuki
    Inada, Ryoji
    Oota, Akio
    SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2008, 21 (03):
  • [24] Effect of filament twist on the structure and properties of Ag-sheathed Bi2223 tape
    Nakamura, Y.
    Kurihara, C.
    Machida, T.
    Inada, R.
    Oota, A.
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2009, 469 (15-20): : 1492 - 1495
  • [25] Effect of barrier configuration on the superconducting properties of Bi2223 multifilamentary tapes with Sr-V-O oxide barriers
    Maeda, H
    Inaba, T
    Sato, M
    Zhang, PX
    Kumakura, H
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2001, 11 (01) : 2959 - 2962
  • [26] Residual and fracture strains of Bi2223 filaments and their relation to critical current under applied bending and tensile strains in Bi2223/Ag/Ag alloy composite superconductor
    Ochiai, S.
    Shin, J. K.
    Iwamoto, S.
    Okuda, H.
    Oh, S. S.
    Ha, D. W.
    Sato, M.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (12)
  • [27] Reduction of AC losses in Bi2223 tapes with interfilamentary oxide barriers
    Inada, R.
    Mitsuno, Y.
    Nakamura, Y.
    Oota, A.
    Li, C. S.
    Zhang, P. X.
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2009, 469 (15-20): : 1500 - 1504
  • [28] Effect of V additions on Bi2223 phase formation and superconducting properties of (Bi,Pb)2Sr2Ca2Cu3Oz
    Maeda, H
    Kakimoto, K
    Kikuchi, M
    Willis, JO
    Watanabe, K
    Tanaka, Y
    Kumakura, H
    ADVANCES IN CRYOGENIC ENGINEERING MATERIALS, VOL 44, PTS A AND B, 1998, 44 : 561 - 567
  • [29] Magnetic shielding effect for Bi (2223) superconductor
    Zhang, Jinzhi
    He, Aisheng
    Fu, Xuekui
    Hua, Peiwen
    Zhou, Yiru
    Gongneng Cailiao/Journal of Functional Materials, 1998, 29 (03): : 333 - 334
  • [30] Magnetic shielding effect for Bi (2223) superconductor
    North Univ of Technology, Beijing, China
    Gongneng Cailiao, 3 ([d]333-334):