Heterogenous InP Electro-Absorption Modulator with Si Waveguides for Beyond 200 Gbps/λ Optical Interconnects

被引：0

作者：

Ostrovskis, Armands ^{[1
,2
]}

Szczerba, Krzysztof ^{[3
]}

Salgals, Toms ^{[1
]}

Norberg, Erik ^{[3
]}

Koenigsmann, Michael ^{[2
]}

Sonkoly, John ^{[3
]}

Rubuls, Kristaps ^{[1
]}

Yun, Han ^{[3
]}

Krueger, Benjamin ^{[2
]}

Piels, Molly ^{[3
]}

Sedulis, Arvids ^{[1
]}

Pittala, Fabio ^{[2
]}

Spolitis, Sandis ^{[1
]}

Gruen, Markus ^{[2
]}

Louchet, Hadrien ^{[2
]}

Jahn, Robert ^{[2
]}

Yamaguchi, Kazuo ^{[2
]}

Bobrovs, Vjaceslavs ^{[1
]}

Pang, Xiaodan ^{[1
,4
,5
]}

Guzzon, Robert ^{[3
]}

Ozolins, Oskars ^{[1
,4
,5
]}

机构：

[1] Riga Tech Univ, Inst Photon Elect & Telecommun, LV-1048 Riga, Latvia

[2] Keysight Technol Deutschland GmbH, D-71034 Boblingen, Germany

[3] OpenLight Photon, 6868 Cortona Dr, Goleta, CA 93117 USA

[4] KTH Royal Inst Technol, Dept Appl Phys, S-10691 Stockholm, Sweden

[5] RISE Res Inst Sweden, S-16440 Kista, Sweden

来源：

2024 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION, OFC | 2024年

基金：

瑞典研究理事会;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate an InP EAM with Si waveguides and achieve 256 Gbaud OOK, 170 Gbaud PAM4, 150 Gbaud PAM6, and 120 Gbaud PAM8 transmission over 500 meters of SMF below 6.25% OH HD-FEC threshold. (c) 2024 The Author(s)

引用

页数：3

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