Precise Modeling of Silicon Carbide-Based Power Switches

被引：0
|
作者：
Tang, Boxuan [1 ]
Deng, Yunfeng [1 ]
Wang, Yici [1 ]
Liang, Rui [2 ]
Wang, Kaiyuan [1 ]
Sun, Jinhong [2 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore, Singapore
[2] Hong Kong Polytech Univ, Dept Elect & Elect Engn, Hong Kong, Peoples R China
来源：
2024 10TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS SYSTEMS AND APPLICATIONS, PESA 2024 | 2024年
关键词：
SIC MOSFET; switching loss; dual-pulse simulation test; MOSFET;
D O I：
10.1109/PESA62148.2024.10594912
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
This paper first introduces the characteristics and properties of SiC MOSFETs, focusing on a silicon carbide module, the C2M0080120D, manufactured by CREE. A detailed analysis of the static and dynamic characteristics of SiC MOSFET modules is conducted. Static characteristics encompass the effects of different gate drive voltages, temperature variations, and junction capacitance on the device. Dynamic characteristics were analyzed based on the turn-on and turn-off processes of SiC MOSFETs. Subsequently, using a dual-pulse simulation circuit, the impact factors affecting the module's switching performance, including drive resistance and parasitic inductance, are investigated.
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页数：6
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