Proximity-induced antisymmetric humps in Hall resistivity in Fe-doped monolayer WSe2

被引:0
|
作者
Fang, Mengqi [1 ]
Tang, Chunli [2 ]
Chen, Siwei [1 ]
Tang, Zitao [1 ]
Choi, Min-Yeong [3 ]
Jang, Jae Hyuck [3 ]
Chung, Hee-Suk [3 ]
Nair, Maya Narayanan [4 ]
Jin, Wencan [2 ]
Yang, Eui-Hyeok [1 ,5 ]
机构
[1] Stevens Inst Technol, Dept Mech Engn, Hoboken, NJ 07030 USA
[2] Auburn Univ, Dept Phys, Auburn, AL 36849 USA
[3] Korea Basic Sci Inst, Electron Microscopy Grp Mat Sci, Jeonju 54907, Jeollabuk Do, South Korea
[4] Adv Sci Res Ctr, Nanosci Initiat, New York, NY 10031 USA
[5] Stevens Inst Technol, Ctr Quantum Sci & Engn, Hoboken, NJ 07030 USA
基金
美国国家科学基金会;
关键词
SKYRMION;
D O I
10.1063/5.0250741
中图分类号
O59 [应用物理学];
学科分类号
摘要
Non-collinear spin texture has attracted great attention since it provides an important probe of the interaction between electron and topological spin textures. While it has been widely reported in chiral magnets, oxide heterostructures, and hybrid systems such as ferromagnet/heavy metal and ferromagnet/topological insulators, the study of non-collinear spin texture in two-dimensional (2D) van der Waals (vdW) dilute magnetic semiconductor (DMS) monolayers is relatively lacking, hindering the understanding at the atomically thin scale. Here, we probe the temperature-dependent antisymmetric humps in Hall resistivity by utilizing the proximity coupling of Fe-doped monolayer WSe2(Fe:WSe2) synthesized using chemical vapor deposition on a Pt Hall bar. Multiple characterization methods were employed to demonstrate that Fe atoms substitutionally replace W atoms, making a 2D vdW DMS at room temperature. Distinct from the intrinsic anomalous Hall effect, we found the transverse Hall resistivity of Fe:WSe(2)displaying two additional antisymmetric peak features in the temperature-dependent measurements. These peaks are attributed to the magnetic features at the Fe:WSe(2)and Pt interface. Our work shows that a DMS synthesized from 2D vdW transition metal dichalcogenides is promising for realizing magnetic and spintronic applications.
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页数:7
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