Spin-blockade and state lifetimes of many-hole spin states in silicon quantum dots

被引:0
|
作者
Kondo, Chihiro [1 ]
Mizokuchi, Raisei [1 ]
Sakamoto, Go [1 ]
Tsuchiya, Ryuta [2 ]
Mine, Toshiyuki [2 ]
Hisamoto, Digh [2 ]
Mizuno, Hiroyuki [2 ]
Yoneda, Jun [3 ,4 ]
Kodera, Tetsuo [1 ]
机构
[1] Inst Sci Tokyo, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan
[2] Hitachi Ltd, Res & Dev Grp, Kokubunji, Tokyo 1858601, Japan
[3] Inst Sci Tokyo, Acad Super Smart Soc, Meguro Ku, Tokyo 1528552, Japan
[4] Univ Tokyo, Dept Adv Mat Sci, Kashiwa, Chiba 2778561, Japan
关键词
quantum dot; semiconductor; spin qubit; spin blockade; relaxation time; hole spin; OPERATION; READOUT; QUBIT;
D O I
10.35848/1347-4065/ad9a71
中图分类号
O59 [应用物理学];
学科分类号
摘要
Hole spins in silicon quantum dots (QDs) are a promising candidate for fault-tolerant quantum computing. To achieve the high-fidelity readout and high coherence required for fault tolerance, the evaluation of spin-blockade and state lifetimes is important because they can limit the qubit fidelities. In this study, we characterize these two figures of merit of many-hole qubits in silicon QDs. We report a spin-blockade lifetime of 5.1 mu s, which is comparable with the values reported previously, and a spin-state lifetime of 0.91 ms, which is longer than the one measured in a few-hole silicon QD in a previous study. We furthermore provide insights into a many-hole spin state based on the estimated tunneling rate ratio.
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页数:5
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