Influence of metal ion doping on the photo-electrochemical detection performance of WO3

被引:0
|
作者
Phogat, Peeyush [1 ,2 ]
Rawat, Satyam [1 ]
Thakur, Jahanvi [1 ]
Shreya
Jha, Ranjana [1 ]
Singh, Sukhvir [1 ]
机构
[1] Netaji Subhas Univ Technol, Dept Phys, Res Lab Energy Syst, New Delhi, India
[2] CSIR Natl Inst Sci Commun & Policy Res, New Delhi, India
关键词
Tungsten trioxide; Electrochemical photodetector; Metal doping; Responsivity; Detectivity; QUANTUM DOTS; OXIDE; CONVERSION; STORAGE;
D O I
10.1016/j.sna.2024.116150
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study investigates the electrochemical photodetection performance of pure WO3 and its doped variants with Cr3 +, Co2+, Ag1 +, Hg1 +, and Pb4+ ions. Pure WO3, while stable and responsive, exhibits limited responsivity due to low carrier mobility and recombination rates. To address these limitations, we introduce various dopants to enhance its photodetection parameters, focusing on responsivity, detectivity, rise time, and decay time across a range of applied voltages. Our results indicate that each dopant uniquely influences WO3's performance. Agdoped WO3 demonstrates the highest responsivity, while Pb-doped WO3 exhibits the most balanced improvement in detectivity and responsivity, making it suitable for applications demanding both high sensitivity and stability. Cr and Co doping improves stability and response speed, respectively, enhancing suitability for specific operational requirements. This comprehensive analysis provides valuable insights for the development of optimized electrochemical photodetectors, demonstrating the potential of doped WO3 for high-performance applications in diverse photodetection fields.
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页数:11
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