thin film transistors;
conductivity;
OLED;
IGZO;
BIAS;
SIMULATION;
STRESS;
OXIDES;
D O I:
10.1088/2631-8695/ad970c
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
This paper highlights the thin film transistors used in the latest applications and devices. The working principle of thin film transistors with various device structures can be used to fabricate thin film transistors. Progress in the latest materials that are being used in applications like LCDs, sensors, RFID tags, Displays, etc The remarkable characteristics of Indium-Gallium-Zinc Oxide (IGZO) thin films, for instance, their transparency and high mobility, have generated significant interest in the application part of Thin-Film Transistors (TFTs). Simulating the functioning of a-IGZO TFTs over Silvaco [Atlas] TCAD Tool, four distinct insulators [SiO2, Si3N4, HfO2, and Al2O3] are taken into consideration by adjusting insulator thicknesses and measuring the overall current density.
机构:
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University
Collaborative Innovation Center of Advanced Microstructures,Nanjing UniversityJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University
于广
武辰飞
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h-index: 0
机构:
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University
Collaborative Innovation Center of Advanced Microstructures,Nanjing UniversityJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University
机构:
Univ KwaZulu Natal, Howard Coll, Dept Elect Engn, ZA-4041 Durban, South AfricaUniv KwaZulu Natal, Howard Coll, Dept Elect Engn, ZA-4041 Durban, South Africa
机构:
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University
Collaborative Innovation Center of Advanced Microstructures,Nanjing UniversityJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University
于广
武辰飞
论文数: 0引用数: 0
h-index: 0
机构:
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University
Collaborative Innovation Center of Advanced Microstructures,Nanjing UniversityJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University
武辰飞
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陆海
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任芳芳
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张荣
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郑有炓
黄晓明
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机构:
Peter Griinberg Research Center,Nanjing University of Posts andJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University
机构:
Nara Inst Sci & Technol, Grad Sch Sci & Technol, Div Mat Sci, Ikoma 6300192, JapanNara Inst Sci & Technol, Grad Sch Sci & Technol, Div Mat Sci, Ikoma 6300192, Japan
Kise, Kahori
Fujii, Mami N.
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Nara Inst Sci & Technol, Grad Sch Sci & Technol, Div Mat Sci, Ikoma 6300192, JapanNara Inst Sci & Technol, Grad Sch Sci & Technol, Div Mat Sci, Ikoma 6300192, Japan
Fujii, Mami N.
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Bermundo, Juan Paolo
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Ishikawa, Yasuaki
Uraoka, Yukiharu
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Nara Inst Sci & Technol, Grad Sch Sci & Technol, Div Mat Sci, Ikoma 6300192, JapanNara Inst Sci & Technol, Grad Sch Sci & Technol, Div Mat Sci, Ikoma 6300192, Japan