Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion

被引：0
|
作者：
Juraev, Khimmatali [1 ,2 ]
Khajiev, Mardonbek [1 ,2 ]
Kutlimratov, Aleksandr [1 ]
Akhmedov, Abdumirkhakim [2 ]
Saidov, Dilmurod [3 ]
机构：
[1] Uzbek Acad Sci, Phys Tech Inst, Chingiz Aytmatov Str 2B, Tashkent 100084, Uzbekistan
[2] Tashkent Inst Irrigat & Agr Mechanizat Engn, Kori Niyoziy 39, Tashkent 100084, Uzbekistan
[3] Tashkent Univ Informat Technol, Urgench Branch, Urgench, Uzbekistan
来源：
MATERIALS SCIENCE-MEDZIAGOTYRA | 2025年 / 31卷 / 01期
关键词：
4H-SiC; aluminum diffusion; p -n junction; I -V characteristic; C -V characteristic; SELECTIVE DIFFUSION; DIODES;
D O I：
10.5755/j02.ms.36681
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, the electrophysical characteristics of the 4H-SiC p-n junction created by low-temperature diffusion of aluminum were studied. Current-voltage (I-V) characteristics are analysed, and the current transport mechanisms in 4HSiC p-n junctions are discussed. It is shown that at low forward bias voltages, the generation-recombination mechanism dominates, and the I-V characteristics at voltages U > 3.0 V obey the linear law. At reverse biases, the dominant mechanism of current transfer is limited by the space charge.
引用
收藏
页码：18 / 21
页数：4
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