Nanoribbon of Zigzag Silicene for Spin Field Effect Transistor with Low Voltage Bias

A novel two-gate Spin-Field Effect Transistor (Spin-FET), employing Silicene nanoribbon with a mirror version z-shaped zigzag structure, as the channel material is modelled and assessed in this study. The proposed design of Spin-FET device is highly compatible with CMOS technology, enabling the creation of both n-type and p-type devices combining parallel and anti-parallel modes of Spin-FET. The device's feature size is in sub-4 nm range, making it suitable for cutting-edge integrated circuit technology. It offers enhanced "ON" current, reduced power consumption and parasitic capacitances, which are essential for high-frequency and low-power applications.