Toward TSV-Compatible Microfluidic Cooling for 3D ICs

被引:0
|
作者
Yan, Geyu [1 ]
Chung, Euichul [1 ]
Masselink, Erik [1 ]
Oh, Shane [1 ]
Zia, Muneeb [1 ]
Ramakrishnan, Bharath [2 ]
Oruganti, Vaidehi [2 ]
Alissa, Husam [2 ]
Belady, Christian [3 ]
Im, Yunhyeok [4 ]
Joshi, Yogendra
Bakir, Muhannad S. [1 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30318 USA
[2] Microsoft CO I, Redmond, WA 98052 USA
[3] Vantage Data Ctr, Denver, CO 80206 USA
[4] Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30318 USA
来源
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 2025年 / 15卷 / 01期
基金
美国国家科学基金会;
关键词
Through-silicon vias; Three-dimensional displays; Cooling; Copper; Microfluidics; Resistance heating; Heat sinks; Fabrication; Silicon; Power dissipation; 3-D integrated circuit (3D IC); data center efficiency; microfluidic cooling; micropin-fin; through-silicon via (TSV); THROUGH-SILICON-VIAS; FIN HEAT SINK; PIN; TECHNOLOGY;
D O I
10.1109/TCPMT.2024.3516653
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cooling presents a significant challenge for high-performance three-dimensional integrated circuits (3D ICs). To this end, this research explores through-silicon via (TSV)-compatible micropin-fin heat sink (MPFHS) for high-power 3D chip stacks. Copper TSVs with a diameter of 5.2 mu m and a high aspect ratio of 29:1 are developed. An extensive experimental and computational investigation of the MPFHS under varying flow rates and power conditions was conducted, showing that the MPFHS maintains an average chip temperature below 72 degrees C, even with a total power dissipation of 500 W and a power density of 312 W/cm (2) at a flow rate of 117 mL/min. The minimum total thermal resistance achieved was 0.286 degrees C<middle dot>cm (2) /W.
引用
收藏
页码:104 / 112
页数:9
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