Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors

被引：1

作者：

Seidel, Lukas ^{[1
]}

Liu, Teren ^{[2
]}

Concepcion, Omar ^{[2
]}

Marzban, Bahareh ^{[3
,9
]}

Kiyek, Vivien ^{[2
,10
]}

Spirito, Davide ^{[4
,11
]}

Schwarz, Daniel ^{[1
]}

Benkhelifa, Aimen ^{[1
]}

Schulze, Joerg ^{[5
]}

Ikonic, Zoran ^{[6
]}

Hartmann, Jean-Michel ^{[7
]}

Chelnokov, Alexei ^{[7
]}

Witzens, Jeremy ^{[3
]}

Capellini, Giovanni ^{[4
,8
]}

Oehme, Michael ^{[1
]}

Gruetzmacher, Detlev ^{[2
]}

Buca, Dan ^{[2
]}

机构：

[1] Univ Stuttgart, Inst Semicond Engn, D-70569 Stuttgart, Germany

[2] ForschungszentrumJuelich, Peter Gruenberg Inst 9 PGI 9 & JARA Fundamentals F, D-52428 Julich, Germany

[3] Inst Integrated Photon, RWTH Aachen, D-52074 Aachen, Germany

[4] IHP Leibniz Inst innovat Mikroelektron, D-15236 Frankfurt, Oder, Germany

[5] Friedrich Alexander Univ Erlangen Nurnberg, Chair Electron Devices, D-91058 Erlangen, Germany

[6] Univ Leeds, Pollard Inst, Sch Elect & Elect Engn, Leeds LS2 9JT, England

[7] Univ Grenoble Alpes, CEA, LETI, Grenoble, France

[8] Univ Roma Tre, Dept Sci, I-00146 Rome, Italy

[9] Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland

[10] Forschungszentrum Juelich, Inst Energy Mat & Devices Mat Synth & Proc IMD 2, D-52425 Julich, Germany

[11] Basque Ctr Mat Applicat & Nanostruct, BCMat, UPV-EHU Sci Pk, Leioa 48940, Spain

来源：

NATURE COMMUNICATIONS | 2024年 / 15卷 / 01期

关键词：

HETEROSTRUCTURE;

D O I：

10.1038/s41467-024-54873-z

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Over the last 30 years, group-IV semiconductors have been intensely investigated in the quest for a fundamental direct bandgap semiconductor that could yield the last missing piece of the Si Photonics toolbox: a continuous-wave Si-based laser. Along this path, it has been demonstrated that the electronic band structure of the GeSn/SiGeSn heterostructures can be tuned into a direct bandgap quantum structure providing optical gain for lasing. In this paper, we present a versatile electrically pumped, continuous-wave laser emitting at a near-infrared wavelength of 2.32 mu m with a low threshold current of 4 mA. It is based on a 6-periods SiGeSn/GeSn multiple quantum-well heterostructure. Operation of the micro-disk laser at liquid nitrogen temperature is possible by changing to pulsed operation and reducing the heat load. The demonstration of a continuous-wave, electrically pumped, all-group-IV laser is a major breakthrough towards a complete group-IV photonics technology platform.

引用

页数：8

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