Two-State Lasing in Quantum Well and Quantum Well-Dot Lasers

被引：0

作者：

Beckman, A. A. ^{[1
]}

Kornyshov, G. O. ^{[1
]}

Shernyakov, Yu. M. ^{[1
]}

Gordeev, N. Yu. ^{[1
]}

Payusov, A. S. ^{[1
]}

Mintairov, S. A. ^{[1
]}

Kalyuzhnyy, N. A. ^{[1
]}

Simchuk, O. I. ^{[2
]}

Kharchenko, A. A. ^{[2
]}

Maximov, M. V. ^{[2
]}

机构：

[1] Ioffe Inst, St Petersburg, Russia

[2] Russian Acad Sci, St Petersburg Natl Res Acad Univ, Alferov Fed State Budgetary Inst Higher Educ & Sci, St Petersburg, Russia

来源：

JOURNAL OF APPLIED SPECTROSCOPY | 2025年

基金：

俄罗斯科学基金会;

关键词：

broad waveguide; optical mode; optical gain; quantum well-dots; two-state lasing;

D O I：

10.1007/s10812-025-01881-6

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

The switching of lasing from the ground state to the excited state with increasing current in InGaAs/GaAs lasers with quantum well-dots (QWDs) and quantum wells with different waveguide widths has been studied. It was shown that lasers with a waveguide of width 0.45 mu m did not switch to the lasing mode through an excited state at current densities up to 48 kA/cm2 due to peculiarities of the density of states in QWDs, in contrast to lasers with quantum wells. Generation through an excited state in QWD lasers occurred when the waveguide width increased up to 0.78 mu m and was accompanied by switching from the fundamental to the second-order optical mode.

引用

页码：76 / 82

页数：7

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