Sulfur-locked multiple resonance emitters for high performance orange-red/deep-red OLEDs

被引:2
|
作者
Pu, Yexuan [1 ]
Jin, Qian [2 ]
Zhang, Yuewei [3 ,4 ]
Li, Chenglong [1 ]
Duan, Lian [2 ,3 ]
Wang, Yue [1 ]
机构
[1] Jilin Univ, Coll Chem, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China
[2] Tsinghua Univ, Dept Chem, Key Lab Organ Optoelect & Mol Engn, Minist Educ, Beijing 100084, Peoples R China
[3] Tsinghua Univ, Lab Flexible Elect Technol, Beijing 100084, Peoples R China
[4] Tsinghua Univ, Sch Aerosp Engn, Appl Mech Lab, Beijing 100084, Peoples R China
基金
国家重点研发计划; 中国国家自然科学基金;
关键词
EFFICIENT; ELECTROPHOSPHORESCENCE; PREDICTION; FORMALISM;
D O I
10.1038/s41467-024-55680-2
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Multiple resonance thermally activated delayed fluorescence (MR-TADF) materials are preferred for their high efficiency and high colour purity in organic light-emitting diodes (OLEDs). However, the design strategies of MR-TADF emitters in the red region are very limited. Herein, we propose a concept for a paradigm shift in orange-red/deep-red MR emitters by linking the outer phenyl groups in a classical MR framework through intramolecular sulfur (S) locks. Endowed with the planar architectural feature of the MR mother core, the proof-of-concept S-embedded emitters S-BN and 2S-BN also exhibit considerable flatness, which proves critical in avoiding the direct establishment of potent charge transfer states and inhibiting the non-radiative decay process. The emission maxima of S-BN and 2S-BN are 594 nm and 671 nm, respectively, and both have a high photoluminescence quantum yield of similar to 100%, a rapid radiative decay rate of around 10(7) s(-1), and a remarkably high reverse intersystem crossing rates of about 10(5) s(-1). Notably, maximum external quantum efficiencies of 39.9% (S-BN, orange-red) and 29.3% (2S-BN, deep-red) were also achieved in typical planar OLED structures with ameliorated efficiency roll-offs.
引用
收藏
页数:10
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