Bound and Continuum Intersubband Transitions in Colloidal Quantum Wells

被引:0
|
作者
Diroll, Benjamin T. [1 ]
Coropceanu, Igor [2 ,3 ]
Portner, Joshua [2 ,3 ]
Hua, Muchuan [1 ]
Schaller, Richard D. [1 ,4 ]
Talapin, Dmitri V. [1 ,2 ,3 ]
机构
[1] Ctr Nanoscale Mat, Argonne Natl Lab, Lemont, IL 60439 USA
[2] Univ Chicago, Dept Chem, Chicago, IL 60637 USA
[3] Univ Chicago, James Franck Inst, Chicago, IL 60637 USA
[4] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
基金
美国国家科学基金会;
关键词
nanoplatelets; quantum well; colloidal atomiclayer deposition; intersubband; intraband; TO-CONTINUUM; CORE-SHELL; INTRABAND TRANSITIONS; CDSE NANOPLATELETS; CASCADE LASERS; SEEDED GROWTH; ENERGY; DOTS; ROD; PHOTOLUMINESCENCE;
D O I
10.1021/acs.nanolett.4c05769
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Quantum well intersubband transitions are critical for quantum cascade lasers and infrared photodetectors. Control of band offsets allows bound-to-bound intersubband transitions, with confinement of both initial and final states, and bound-to-continuum transitions, in which only the initial state is energetically confined within the potential well. Both types of transitions are also achieved in colloidal CdSe wells by changing the heterostructure shell. Bare wells have narrow intersubband transitions spanning the near-infrared spectrum following effective mass predictions. Atomically precise core/shells enable a readily adjusted potential well for electrons. For CdSe/ZnS, bound-to-bound transitions are narrow and redshift with shell thickness. By contrast, broad bound-to-continuum absorptions are found in CdSe/CdS. Due to small conduction band offsets, higher conduction band states of the well are more delocalized into the CdS shell. These measurements provide unique data to understand the electronic structure of colloidal quantum wells and chart a path to atomically precise optoelectronic materials for the mid-infrared.
引用
收藏
页码:2366 / 2372
页数:7
相关论文
共 50 条
  • [41] Conduction band intersubband transitions in Ge/SiGe quantum wells
    De Seta, M.
    Capellini, G.
    Busby, Y.
    Evangelisti, F.
    Ortolani, M.
    Virgilio, M.
    Grosso, G.
    Pizzi, G.
    Nucara, A.
    Lupi, S.
    APPLIED PHYSICS LETTERS, 2009, 95 (05)
  • [42] Pulse-induced quantum interference of intersubband transitions in coupled quantum wells
    Müller, T
    Parz, W
    Strasser, G
    Unterrainer, K
    APPLIED PHYSICS LETTERS, 2004, 84 (01) : 64 - 66
  • [43] Bound states in the continuum in cuprous oxide quantum wells
    Aslanidis, Angelos
    Main, Joerg
    Rommel, Patric
    Scheel, Stefan
    Belov, Pavel A.
    PHYSICAL REVIEW B, 2025, 111 (12)
  • [44] INFRARED-LASER BASED ON INTERSUBBAND TRANSITIONS IN QUANTUM-WELLS
    YANG, RQ
    SUPERLATTICES AND MICROSTRUCTURES, 1995, 17 (01) : 77 - 83
  • [45] INTERSUBBAND TRANSITIONS IN COUPLED QUANTUM WELLS UNDER AN INTENSE LASER FIELD
    Gudwani, Monica
    Prasad, Vinod
    Jha, Pradeep Kumar
    Mohan, Man
    INTERNATIONAL JOURNAL OF NANOSCIENCE, 2008, 7 (4-5) : 215 - 221
  • [47] Excitonic effects in the photoinduced conduction intersubband transitions in undoped quantum wells
    Sadeghi, SM
    Li, W
    PHYSICAL REVIEW B, 2004, 70 (19) : 1 - 8
  • [48] Theory of coherent optical nonlinearities of intersubband transitions in semiconductor quantum wells
    Cominotti, R.
    Leymann, H. A. M.
    Nespolo, J.
    Manceau, J. M.
    Jeannin, M.
    Colombelli, R.
    Carusotto, I.
    PHYSICAL REVIEW B, 2023, 107 (11)
  • [49] Intersubband transitions and many body effects in ZnMgO/ZnO quantum wells
    Hierro, Adrian
    Bajo, Miguel Montes
    Tamayo-Arriola, Julen
    Hugues, Maxime
    Ulloa, J. M.
    Le Biavan, N.
    Peretti, Romain
    Julien, Francois
    Faist, Jerome
    Chauveau, Jean-Michel
    OXIDE-BASED MATERIALS AND DEVICES IX, 2018, 10533
  • [50] Intersubband transitions in different structures of conduction-band quantum wells
    Okhovat-Alavian, SMJ
    Afzali-Kusha, A
    Kamarei, M
    ICM 2000: PROCEEDINGS OF THE 12TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, 2000, : 181 - 186