Local Diagnostics of Spin Defects in Irradiated SiC Schottky Diodes

被引：0
|
作者：
Likhachev, K. V. [1 ]
Skoromokhov, A. M. [1 ]
Uchaev, M. V. [1 ]
Uspenskaya, Yu. A. [1 ]
Kozlovski, V. V. [2 ]
Levinshtein, M. E. [1 ]
Eliseev, I. A. [1 ]
Smirnov, A. N. [1 ]
Kramushchenko, D. D. [1 ]
Babunts, R. A. [1 ]
Baranov, P. G. [1 ]
机构：
[1] Ioffe Inst, St Petersburg 194021, Russia
[2] Peter Great St Petersburg Polytech Univ, St Petersburg 195251, Russia
来源：
JETP LETTERS | 2024年 / 120卷 / 05期
基金：
俄罗斯科学基金会;
关键词：
SILICON VACANCY; EPR IDENTIFICATION; SPECTROSCOPY; STATE;
D O I：
10.1134/S0021364024602707
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The spectra of anticrossing of spin sublevels have been recorded and spin-3/2 color centers have been identified for the first time in commercially available 4H-SiC Schottky diodes irradiated with 0.9-MeV electrons or 15-MeV protons. The effect of the irradiation density on the defect formation has been shown. It has been demonstrated that the increase in the temperature at which proton irradiation is carried out acts as a short-term annealing, leading to a decrease in the concentration of point defects.
引用
收藏
页码：354 / 359
页数：6
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