Characterization of Ba-Sr - Sr thin films deposited by spray pyrolysis and fabrication of Ag/Ba-Sr/n-Si/Ag - Sr/n-Si/Ag diodes

被引：1
|
作者：
Sakthivel, M. [1 ]
Mary, S. Stella [1 ]
Akila, T. [2 ]
Alodhayb, Abdullah N. [3 ]
Muthuramamoorthy, Muthumareeswaran [3 ]
Balasubramani, V. [2 ]
机构：
[1] St Peters Inst Higher Educ & Res, Dept Phys, Chennai 600066, Tamil Nadu, India
[2] Saveetha Univ, Saveetha Inst Med & Tech Sci, Saveetha Sch Engn, Dept Phys, Chennai 602105, Tamil Nadu, India
[3] King Saud Univ, King Abdullah Inst Nanotechnol, POB 2455, Riyadh 11451, Saudi Arabia
来源：
OPTICAL MATERIALS | 2024年 / 157卷
关键词：
Thin films; Diode; Photodiode; Optoelectronic applications; JNSP; ELECTRICAL-PROPERTIES; TEMPERATURE; IMPACT;
D O I：
10.1016/j.optmat.2024.116176
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This study describes the synthesis of barium (Ba) and strontium (Sr) thin films using jet neublizer spray pyrolysis (JNSP) technology, which facilitates the fabrication of junction diodes whose structure, surface morphology, and optical properties are affected by significant water absorption. Ba-Sr films with different strontium concentrations (specifically 0, 2, 4 and 6 wt%) were further investigated to provide a better understanding of how this change affects the final diode type. The research design focuses on fabricating n-type silicon junction diodes containing barium and strontium and directly measuring and analyzing their I-V characteristics, ultimately helping elucidate these devices' electrical behavior. Among the analyzed diodes, the Ag/Ba-Sr/n-Si/Ag diode performed well in various design tests, indicating its competitiveness due to its goodness in optoelectronic devices. The ideal value (n) of a 6 wt% Ba-Sr diode is 1.77 and the barrier height (Phi(B)) is 0.84 eV. These results demonstrate the general future of Ba-Sr junction diode, as they not only reveal important discoveries regarding their electrical properties but also demonstrate the potential for improved performance in optoelectronic applications.
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页数：8
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