Analysis of Thermal-Induced Microstructural Changes in Nanoscale Zr/Nb Metal Layers after Proton Irradiation

被引:0
|
作者
Lomygin, A. D. [1 ]
Krotkevich, D. G. [1 ]
Laptev, R. S. [1 ]
Stepanova, E. N. [1 ]
Sidorin, A. A. [2 ]
Orlov, O. S. [2 ]
机构
[1] Natl Res Tomsk Polytech Univ, Tomsk 634050, Russia
[2] Joint Inst Nucl Res, Dubna 141980, Russia
来源
JOURNAL OF SURFACE INVESTIGATION | 2024年 / 18卷 / 06期
基金
俄罗斯科学基金会;
关键词
nanoscale metal layers; incoherent interfaces; gas reaction controller; magnetron sputtering; glow discharge optical emission spectrometry; positron annihilation spectroscopy; Doppler broadening spectroscopy; X-ray diffraction analysis; transmission electron microscopy; RADIATION-DAMAGE; HE ION; MULTILAYERS; EVOLUTION; COATINGS; FILMS;
D O I
10.1134/S102745102470143X
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The effect of annealing on the microstructure, defect structure, and mechanical properties of nanoscale metal systems consisting of alternating layers of Zr and Nb is considered. The effect of annealing was studied on coatings pre-irradiated with protons. Nanoscale Zr/Nb metal layers were prepared using the magnetron sputtering method, each layer was 50 nm thick, and the total thickness of coatings was about 1 mu m. Using electron microscopy and glow discharge optical emission spectrometry, it was shown that the multilayer structure was preserved after both irradiation and annealing of irradiated Zr/Nb samples. After annealing at 300 degrees C, a decrease in hydrogen luminescence intensity and proton redistribution were observed. Using X-ray phase analysis, it was shown that at an annealing temperature of 200 degrees C, the interplanar distances for Zr and Nb decreased. At an annealing temperature of 300 degrees C, a sharp increase in the interplanar distance in Zr layers and a slight decrease in the interplanar distance in Nb layers were detected. Layer-by-layer analysis of defects in nanoscale metal layers using variable-energy positron beam and Doppler broadening spectroscopy showed that increasing the annealing temperature stimulated the migration and annihilation of defects at interfaces. Regions of reduced electron density at the interfaces on the zirconium side remain the predominant positron capture centers.
引用
收藏
页码:1482 / 1489
页数:8
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