Effect of Porosity on the Rate of Thermal Oxidation of Silicon Carbide Ceramics Produced by Spark Plasma Sintering

被引：0
|
作者：
Asvarov, A. Sh. [1 ,2 ]
Akhmedov, A. K. [2 ]
Volchkov, I. S. [1 ]
Kanevsky, V. M. [1 ]
机构：
[1] Natl Res Ctr Kurchatov Inst, Shubnikov Inst Crystallog, Kurchatov Complex Crystallog & Photon, Moscow 119333, Russia
[2] Russian Acad Sci, Dagestan Fed Res Ctr, Amirkhanov Inst Phys, Makhachkala 367030, Russia
来源：
CRYSTALLOGRAPHY REPORTS | 2024年 / 69卷 / 07期
基金：
俄罗斯科学基金会;
关键词：
HIGH-TEMPERATURE APPLICATIONS; AEROSPACE; BEHAVIOR;
D O I：
10.1134/S1063774524602223
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The process of high-temperature oxidation of silicon carbide-based ceramic materials synthesized by spark plasma sintering without any sintering-activating additives has been studied. Analysis of the microstructure of the oxidized ceramic samples and the data on the change in their mass indicate the formation of a protective SiO2 layer on the SiC surface, which is characteristic of passive oxidation of silicon-containing oxygen-free compounds. The results of the comparative study of oxidation of the SiC ceramic samples with different porosity in air at a temperature of 1200 degrees C have revealed a linear relationship between the growth rate of the oxidized sample mass and the volume of open pores in the sample.
引用
收藏
页码：1157 / 1161
页数：5
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