Enhanced luminescence efficiency in GaN-based blue laser diodes by H plasma technology

被引:0
|
作者
Wang, Lu [1 ,2 ,3 ]
Xu, Kun [1 ,2 ]
Yu, Guohao [1 ,2 ,4 ]
Ren, Xiaoyu [1 ,2 ,4 ]
Qin, Xulei [2 ,3 ]
Zhang, Li [1 ,2 ]
Chen, Tiwei [1 ,2 ,4 ]
Zhang, Fan [1 ,2 ]
Li, Fangzhi [1 ,2 ,3 ]
Zhou, Jiaan [1 ,2 ]
Xue, Bangda [1 ,2 ]
Zeng, Zhongming [1 ,2 ,4 ]
Liu, Jianping [1 ,2 ,4 ]
Zhang, Baoshun [1 ,2 ,4 ]
机构
[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanofabricat Facil, Suzhou 215123, Jiangsu, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Jiangsu, Peoples R China
[3] Changchun Univ Sci & Technol, Sch Phys, Changchun 130013, Peoples R China
[4] Univ Sci & Technol China, Sch Nano Technol & Nano Bion, Hefei 230026, Anhui, Peoples R China
来源
OPTICS EXPRESS | 2024年 / 32卷 / 20期
基金
中国国家自然科学基金;
关键词
SILICON-DIOXIDE; WAVELENGTH; SINGLE;
D O I
10.1364/OE.532577
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
To the best of our knowledge, this paper is the first to report the application of H plasma treatment technology to the treatment of laser diode ridge. Through the H plasma passivation on the ridge of the laser diode, a neutral complexes layer (i.e., Mg-H) is formed on the ridge, which effectively reduces ridge leakage current, thus reducing the threshold current of the laser diode and significantly improving the slope efficiency. The ridge were treated with H plasma using the Oxford Plasmalab System 100 ICP 180. The lasers' leakage current, optical power, emission wavelength, and other parameters were measured using a Cascade150 + B1505A probe station system, along with matched optical power meters and fiber optic spectrometers. Specifically, this study successfully fabricates a GaN-based blue laser diode characterized by a threshold current as low as 0.42 A and a slope efficiency as high as 1.96 W/A. Compared with the traditional silicon oxide-mediated ridge treated laser, the threshold current of the laser passivated by H plasma is reduced by 0.13 A, and the slope efficiency is increased by 0.56 W/A. This research not only enhances the performance of laser diodes but also has the potential to expand their application in multiple fields.
引用
收藏
页码:34492 / 34499
页数:8
相关论文
共 50 条
  • [31] Enhanced luminescence from GaN-based blue LEDs grown on grooved sapphire substrates
    Feng, ZH
    Lau, KM
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (09) : 1812 - 1814
  • [32] Investigation of the mechanism of carrier recombination in GaN-based blue laser diodes before lasing
    Liang, Feng
    Huang, Yujie
    Yang, Jing
    Chen, Ping
    Liu, Zongshun
    Zhao, Degang
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2024, 57 (46)
  • [33] GaN-based blue/green semiconductor laser
    Nakamura, S
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) : 435 - 442
  • [34] High Power and High Luminance Blue Laser Diode Module Using GaN-based Laser Diodes
    Hatakeyama, Kazuya
    Tanahashi, Yasuo
    Konishi, Ryotaro
    Nakagaki, Masatoshi
    Okuno, Ryota
    Sugiyama, Takafumi
    Shibuya, Satoshi
    Okada, Ayato
    Hayamizu, Naoki
    HIGH-POWER DIODE LASER TECHNOLOGY XXII, 2024, 12867
  • [35] Energy Efficiency Analysis of GaN-based Superluminescent Diodes
    Piprek, Joachim
    2019 19TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD 2019), 2019, : 79 - 80
  • [36] Defect influence on luminescence efficiency of GaN-based LEDs
    Li, Shuping
    Fang, Zhilai
    Chen, Hangyang
    Li, Jinchai
    Chen, Xiaohong
    Yuan, Xiaoli
    Sekiguchi, Takashi
    Wang, Qiming
    Kang, Junyong
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (1-3) : 371 - 374
  • [37] High-efficiency GaN-based Laser Diodes for Solid-state Lighting
    Saito, S.
    Hattori, Y.
    Sugai, M.
    Harada, Y.
    Jongil, H.
    Nunoue, S.
    2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, 2008, : 185 - 186
  • [38] Room temperature CW operation of GaN-based blue laser diodes by GaInN/GaN optical guiding layers
    Koike, M
    Yamasaki, S
    Tezen, Y
    Nagai, S
    Iwayama, S
    Kojima, A
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2000, 5
  • [39] High-power GaN-based blue-violet laser diodes with AlGaN/GaN multiquantum barriers
    Lee, SN
    Cho, SY
    Ryu, HY
    Son, JK
    Paek, HS
    Sakong, T
    Jang, T
    Choi, KK
    Ha, KH
    Yang, MH
    Nam, OH
    Park, Y
    Yoon, E
    APPLIED PHYSICS LETTERS, 2006, 88 (11)
  • [40] Brightness of blue GaN-based light-emitting diodes
    Grushko, N. S.
    Lakalin, A. V.
    Solonin, A. P.
    INORGANIC MATERIALS, 2008, 44 (02) : 139 - 141