Enhanced luminescence efficiency in GaN-based blue laser diodes by H plasma technology

被引:0
|
作者
Wang, Lu [1 ,2 ,3 ]
Xu, Kun [1 ,2 ]
Yu, Guohao [1 ,2 ,4 ]
Ren, Xiaoyu [1 ,2 ,4 ]
Qin, Xulei [2 ,3 ]
Zhang, Li [1 ,2 ]
Chen, Tiwei [1 ,2 ,4 ]
Zhang, Fan [1 ,2 ]
Li, Fangzhi [1 ,2 ,3 ]
Zhou, Jiaan [1 ,2 ]
Xue, Bangda [1 ,2 ]
Zeng, Zhongming [1 ,2 ,4 ]
Liu, Jianping [1 ,2 ,4 ]
Zhang, Baoshun [1 ,2 ,4 ]
机构
[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanofabricat Facil, Suzhou 215123, Jiangsu, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Jiangsu, Peoples R China
[3] Changchun Univ Sci & Technol, Sch Phys, Changchun 130013, Peoples R China
[4] Univ Sci & Technol China, Sch Nano Technol & Nano Bion, Hefei 230026, Anhui, Peoples R China
来源
OPTICS EXPRESS | 2024年 / 32卷 / 20期
基金
中国国家自然科学基金;
关键词
SILICON-DIOXIDE; WAVELENGTH; SINGLE;
D O I
10.1364/OE.532577
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
To the best of our knowledge, this paper is the first to report the application of H plasma treatment technology to the treatment of laser diode ridge. Through the H plasma passivation on the ridge of the laser diode, a neutral complexes layer (i.e., Mg-H) is formed on the ridge, which effectively reduces ridge leakage current, thus reducing the threshold current of the laser diode and significantly improving the slope efficiency. The ridge were treated with H plasma using the Oxford Plasmalab System 100 ICP 180. The lasers' leakage current, optical power, emission wavelength, and other parameters were measured using a Cascade150 + B1505A probe station system, along with matched optical power meters and fiber optic spectrometers. Specifically, this study successfully fabricates a GaN-based blue laser diode characterized by a threshold current as low as 0.42 A and a slope efficiency as high as 1.96 W/A. Compared with the traditional silicon oxide-mediated ridge treated laser, the threshold current of the laser passivated by H plasma is reduced by 0.13 A, and the slope efficiency is increased by 0.56 W/A. This research not only enhances the performance of laser diodes but also has the potential to expand their application in multiple fields.
引用
收藏
页码:34492 / 34499
页数:8
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