Electrophysical and thermoelectric properties and crystal structure of the formed Mn4Si7 thin vacuum coatings

被引:0
|
作者
Igamov, B.D. [1 ]
Imanova, G.T. [2 ,3 ,4 ,5 ]
Loboda, V.V. [6 ]
Zhurikhina, V.V. [6 ]
Bekpulatov, I.R. [7 ]
Kamardin, A.I. [1 ]
机构
[1] Scientific and Technical Center with a Design Bureau and Pilot Production of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
[2] Institute of Radiation Problems, Ministry of Science and Education Republic of Azerbaijan, 9 B.Vahabzade str., Baku,AZ1143, Azerbaijan
[3] Khazar University, Department of Physics and Electronics, 41 Mahsati Str., Baku,AZ1096, Azerbaijan
[4] Western Caspian University, Baku,AZ-1001, Azerbaijan
[5] UNEC Research Center for Sustainable Development and Creen Economy Named After Nizami Ganjavi, Azerbaijan State University of Economics (UNEC), 6 Istiglaliyyat Str., Baku,1001, Azerbaijan
[6] Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia
[7] Karshi State University, Karshi, Uzbekistan
来源
Optical Materials: X | 2024年 / 24卷
关键词
Powder coatings - Selenium compounds - Silicides;
D O I
10.1016/j.omx.2024.100353
中图分类号
学科分类号
摘要
The necessary information on the formation of high manganese silicide (Mn4Si7) coating by magnetron sputtering method is presented in this work. The technology and basic modes of creating the necessary targets for a magnetron sputtering device are presented. Targets were created by adding silicon and manganese powders in the required amount and heating them under vacuum conditions at high temperature and pressure. Thin silicide films (thin coatings) of different thicknesses were formed on the surface of silicon dioxide from the produced targets using the method of magnetron sputtering. The electrophysical and thermoelectric properties of the produced films were studied using physical and optical methods.Due to the change in the structure of the coatings during subsequent heat treatment, the Seebeck coefficient noticeably increases. © 2024 The Author(s)
引用
收藏
相关论文
共 50 条
  • [41] Single-Crystalline Ferromagnetic Mn4Si7 Nanowires
    Ham, Moon-Ho
    Lee, Jae-Woong
    Moon, Kyeong-Ju
    Choi, Ji-Hyuk
    Myoung, Jae-Min
    JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 113 (19): : 8143 - 8146
  • [42] Magnetotransport properties of nonstoichiometric Si-Mn alloys with an excess of manganese relative to silicides Mn4Si7 and MnSi
    Nikolaev, S. N.
    Chernogolazov, K. Yu.
    Shorokhova, A. V.
    Parshina, L. S.
    Levanov, V. A.
    Maslakov, K. I.
    Novodvorskii, O. A.
    Ryl'kov, V. V.
    JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2016, 61 (12) : 1379 - 1382
  • [43] Crystal structure and thermoelectric properties of chimney-ladder compounds in the Ru2Si3-Mn4Si7 pseudobinary system
    Okamoto, Norihiko L.
    Koyama, Tatsuya
    Kishida, Kyosuke
    Tanaka, Katsushi
    Inui, Haruyuki
    ACTA MATERIALIA, 2009, 57 (17) : 5036 - 5045
  • [44] First principle study on the effect of the photoelectric properties of (La, Ce)-doping Mn4Si7
    Wang, Li
    Zhang, Jin-Min
    He, Ten
    Wang, Kun
    Xie, Quan
    MATERIALS RESEARCH EXPRESS, 2019, 6 (09)
  • [45] On the crystal structure and thermoelectric properties of thin Si1–xMnx films
    I. V. Erofeeva
    M. V. Dorokhin
    V. P. Lesnikov
    A. V. Zdoroveishchev
    A. V. Kudrin
    D. A. Pavlov
    U. V. Usov
    Semiconductors, 2016, 50 : 1453 - 1457
  • [46] Study of the physical nature of Mn4Si7 crystals formed by the diffusion method using an X-ray diffraction
    Igamov, B. D.
    Kamardin, A. I.
    Nabiev, D. Kh.
    Bekpulatov, I. R.
    Imanova, G. T.
    Kamilov, T. S.
    Kasimov, A. S.
    Norbutaev, N. E.
    JOURNAL OF CRYSTAL GROWTH, 2025, 649
  • [47] A first-principles study of the electronic structure and point defects in higher manganese silicide Mn4Si7
    Chai, Jun
    Li, Guangshu
    He, Mingping
    Shen, Hangjia
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2024, 26 (36) : 23722 - 23729
  • [48] Structure and tribological properties of thin vacuum are coatings on polysulfone
    Grimberg, I
    Zhitomirsky, VN
    Parkansky, N
    Matthews, A
    Wilson, A
    Boxman, RL
    Weiss, BZ
    Goldsmith, S
    SURFACE & COATINGS TECHNOLOGY, 1997, 94-5 (1-3): : 213 - 219
  • [49] Epitaxial Growth of a Mn4Si7 Film on Monocrystalline Silicon Under an Influence of a Sb Surfactant
    Makogon, Yu M.
    Pavlova, O. P.
    Sidorenko, S. I.
    Beddis, G.
    Magilatenko, A. V.
    METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 2008, 30 (10): : 1383 - 1393
  • [50] Selective synthesis of higher manganese silicides: a new Mn17Si30 phase, its electronic, transport, and optical properties in comparison with Mn4Si7
    Tarasov, Ivan A.
    Visotin, Maxim A.
    Kuznetzova, Tatiana V.
    Aleksandrovsky, Aleksandr S.
    Solovyov, Leonid A.
    Kuzubov, Aleksandr A.
    Nikolaeva, Kristina M.
    Fedorov, Aleksandr S.
    Tarasov, Anton S.
    Tomilin, Felix N.
    Volochaev, Michail N.
    Yakovlev, Ivan A.
    Smolyarova, Tatiana E.
    Ivanenko, Aleksandr A.
    Pryahina, Victoria I.
    Esin, Alexander A.
    Yarmoshenko, Yuri M.
    Shur, Vladimir Ya
    Varnakov, Sergey N.
    Ovchinnikov, Sergey G.
    JOURNAL OF MATERIALS SCIENCE, 2018, 53 (10) : 7571 - 7594