Femtosecond laser annealing of 4H-SiC interfaces and optimization of their electrical performance

被引：0
|
作者：
Ren, Yuqi [1 ,3 ]
Yue, Yunfan [1 ,3 ]
Li, Sheng [1 ,4 ]
Chai, Nianyao [1 ,4 ]
Chen, Xiangyu [1 ,3 ]
Zeng, Zhongle [1 ,4 ]
Zhao, Fengyi [2 ]
Wang, Huan [1 ,3 ]
Wang, Xuewen [1 ,2 ,4 ]
机构：
[1] Center of Femtosecond Laser Manufacturing for Advanced Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan,430070, China
[2] Foshan Xianhu Laboratory, Foshan,528000, China
[3] School of Materials Science and Engineering, Wuhan University of Technology, Wuhan,430070, China
[4] International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan,430070, China
来源：
Guangxue Jingmi Gongcheng/Optics and Precision Engineering | 2024年 / 32卷 / 19期
关键词：
D O I：
10.37188/OPE.20243219.2889
中图分类号：
学科分类号：
摘要：
引用
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页码：2889 / 2898
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