Femtosecond laser annealing of 4H-SiC interfaces and optimization of their electrical performance

被引：0
|
作者：
Ren, Yuqi [1 ,3 ]
Yue, Yunfan [1 ,3 ]
Li, Sheng [1 ,4 ]
Chai, Nianyao [1 ,4 ]
Chen, Xiangyu [1 ,3 ]
Zeng, Zhongle [1 ,4 ]
Zhao, Fengyi [2 ]
Wang, Huan [1 ,3 ]
Wang, Xuewen [1 ,2 ,4 ]
机构：
[1] Center of Femtosecond Laser Manufacturing for Advanced Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan,430070, China
[2] Foshan Xianhu Laboratory, Foshan,528000, China
[3] School of Materials Science and Engineering, Wuhan University of Technology, Wuhan,430070, China
[4] International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan,430070, China
来源：
Guangxue Jingmi Gongcheng/Optics and Precision Engineering | 2024年 / 32卷 / 19期
关键词：
D O I：
10.37188/OPE.20243219.2889
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2889 / 2898
相关论文
共 50 条
  • [1] Micromachining of 4H-SiC using femtosecond laser
    Zhang, Ru
    Huang, Chuanzhen
    Wang, Jun
    Zhu, Hongtao
    Yao, Peng
    Feng, Shaochuan
    CERAMICS INTERNATIONAL, 2018, 44 (15) : 17775 - 17783
  • [2] Pulsed Laser Annealing of Phosphorous-Implanted 4H-SiC: Electrical and Structural Characteristics
    Wu, Jingmin
    He, Zhi
    Guo, Zhiyu
    Tian, Run
    Wang, Fengxuan
    Liu, Min
    Yang, Xiang
    Fan, Zhongchao
    Yang, Fuhua
    JOURNAL OF ELECTRONIC MATERIALS, 2022, 51 (01) : 172 - 178
  • [3] Electrical activation of the ion-implanted phosphorus in 4H-SiC by excimer laser annealing
    Tanaka, Y. (yasunori-tanaka@aist.go.jp), 1600, American Institute of Physics Inc. (93):
  • [4] Pulsed Laser Annealing of Phosphorous-Implanted 4H-SiC: Electrical and Structural Characteristics
    Jingmin Wu
    Zhi He
    Zhiyu Guo
    Run Tian
    Fengxuan Wang
    Min Liu
    Xiang Yang
    Zhongchao Fan
    Fuhua Yang
    Journal of Electronic Materials, 2022, 51 : 172 - 178
  • [5] Electrical activation of the ion-implanted phosphorus in 4H-SiC by excimer laser annealing
    Tanaka, Y
    Tanoue, H
    Arai, K
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) : 5934 - 5936
  • [6] Impact of the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces on the Behavior of 4H-SiC MOSFETs
    Roccaforte, Fabrizio
    Fiorenza, Patrick
    Giannazzo, Filippo
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (08) : N3006 - N3011
  • [7] Improvements in the electrical performance of high voltage 4H-SiC Schottky diodes by hydrogen annealing
    Wahab, Q
    Macák, EB
    Zhang, J
    Madsen, LD
    Janzén, E
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 691 - 694
  • [8] Experimental study on femtosecond laser ablation of 4H-SiC substrate
    Zhao, Ziqiang
    Zhao, Lin
    Peng, Yun
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2024, 34 (02)
  • [9] Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser
    Wang, Lukang
    Zhao, You
    Yang, Yu
    Zhang, Manman
    Zhao, Yulong
    MICROMACHINES, 2022, 13 (08)
  • [10] Femtosecond Laser-Induced Surface Patterning on 4H-SiC
    Tomita, Takuro
    Kumai, Ryota
    Kinoshita, Keita
    Matsuo, Shigeki
    Hashimto, Shuichi
    Nagase, Hirokazu
    Nakajima, Makoto
    Suemoto, Tohru
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 879 - +
12345