Influence of Ta2O5 crystallization on the performance of capacitors for high-density DRAMs

被引：0

作者：

Furukawa, R. ^{[1
]}

Kanda, N. ^{[1
]}

Yamamoto, H. ^{[1
]}

Yoshida, T. ^{[1
]}

Yamagami, N. ^{[1
]}

Uemura, T. ^{[1
]}

Honma, T. ^{[1
]}

Kanai, M. ^{[1
]}

Kunitomo, M. ^{[1
]}

Takahashi, M. ^{[1
]}

Uchiyama, H. ^{[1
]}

Ohji, Y. ^{[1
]}

机构：

[1] Hitachi, Ltd, Tokyo, Japan

来源：

IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings | 1999年

关键词：

Capacitance - Capacitors - Crystallization - Dielectric films - Dynamic random access storage - Grain growth - Thin film devices - X ray crystallography;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The capacitance needed for the long refresh time of high-density DRAMs can be obtained by using a Ta2O5 capacitor. We found that the electrical characteristics of this capacitor are strongly related to the crystallization of Ta2O5 thin films. Accordingly, we found that a Ta2O5 crystal with a low intensity ratio (I200/I001) surprisingly improves the electrical characteristics of the Ta2O5 capacitor. Our technique for controlling grain growth in the Ta2O5 film formation improves the electrical characteristics of a Ta2O5 capacitor considerably.

引用

页码：249 / 252

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