Purely optical measurement of the resistivity distribution of semi-insulating InP:Fe by means of the photorefractive effect

被引：0
|
作者：
Univ of Erlangen, Erlangen, Germany [1 ]
机构：
来源：
Appl Phys Lett | / 3卷 / 392-394期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Model for trap filling and avalanche breakdown in semi-insulating Fe:InP
    Corvini, PJ
    Bowers, JE
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (01) : 259 - 269
  • [32] Effect of annealing conditions on the uniformity of undoped semi-insulating InP
    Kainosho, K
    Ohta, M
    Uchida, M
    Nakamura, M
    Oda, O
    JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (03) : 353 - 356
  • [33] The effect of nitrogen implantation on structural changes in semi-insulating InP
    Santhakumar, K
    Jayavel, P
    Reddy, GLN
    Sastry, VS
    Nair, KGM
    Ravichandran, V
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 212 : 197 - 200
  • [34] INGAASP/INP OPTICAL SWITCHES EMBEDDED WITH SEMI-INSULATING INP CURRENT BLOCKING LAYERS
    WAKAO, K
    NAKAI, K
    KUNO, M
    YAMAKOSHI, S
    IEEE JOURNAL ON SELECTED AREAS IN COMMUNICATIONS, 1988, 6 (07) : 1199 - 1204
  • [35] Structural, electrical, and optical analysis of ion implanted semi-insulating InP
    Carmody, C
    Tan, HH
    Jagadish, C
    Douhéret, O
    Maknys, K
    Anand, S
    Zou, J
    Dao, L
    Gal, M
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (02) : 477 - 482
  • [36] Optical absorption edge of semi-insulating GaAs and InP at high temperatures
    Beaudoin, M
    DeVries, AJG
    Johnson, SR
    Laman, H
    Tiedje, T
    APPLIED PHYSICS LETTERS, 1997, 70 (26) : 3540 - 3542
  • [37] EFFECT OF FE CONTENT ON THE THERMAL-STABILITY OF LEC-GROWN SEMI-INSULATING INP
    MORIOKA, M
    KIKUCHI, K
    KOHE, K
    AKAI, S
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 37 - 42
  • [38] INHOMOGENEITY OF SEMI-INSULATING GAAS WAFERS WITH NEARLY UNIFORM RESISTIVITY DISTRIBUTION
    SIEGEL, W
    WITTE, H
    KUHNEL, G
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 112 (01): : K35 - K37
  • [39] PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY OF SEMI-INSULATING INP-FE AND INP-CR
    RHEE, JK
    BHATTACHARYA, PK
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4247 - 4249
  • [40] Production of semi-insulating layers in n-doped InP by Fe implantation
    1600, American Inst of Physics, Woodbury, NY, USA (76):
12345