AlN/GaAs interface analyses by auger electron spectroscopy and x-ray photoelectron spectroscopy

被引：0

作者：

Cao, Xin ^{[1
]}

Luo, Jinsheng ^{[1
]}

Chen, Tangsheng ^{[1
]}

Chen, Kejin ^{[1
]}

机构：

[1] Xi'an Jiaotong Univ, Xi'an, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1999年 / 20卷 / 07期

关键词：

Interfaces (materials) - Semiconducting gallium arsenide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：539 / 542

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