Optical characterization of indium-rich strained In1-xGaxAs/InP single- and multiple-quantum-well structures

被引：0

作者：

Schwedler, R. ^{[1
]}

Wolter, K. ^{[1
]}

Gallmann, B. ^{[1
]}

Gruetzmacher, D. ^{[1
]}

Stollenwerk, M. ^{[1
]}

Kurz, H. ^{[1
]}

机构：

[1] Inst of Semiconductor Electronics, Aachen, Germany

来源：

Materials science & engineering. B, Solid-state materials for advanced technology | 1991年 / B9卷 / 1-3期

关键词：

Crystals - Epitaxial Growth - Crystals - Strain - Optoelectronic Devices - Photoluminescence - Spectrum Analysis;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We report on the photoluminescence spectroscopy of a large set of strained In1-xGaxAs/InP quantum well structures grown by low pressure metallo-organic vapour phase epitaxy. Distinct peaks from monolayer steps are observed in all samples. For the first time, data on indium-rich In1-xGaxAs/InP structures with complementary gallium contents as low as xGa = 0.07 and xGa = 0.11 are reported. The sample quality appears independent of the number of quantum wells stacked in the structure. With decreasing gallium content, a decrease in luminescence intensity is observed, which is related to an increase in the number of non-radiative recombination centres with respect to lattice-matched samples.

引用

页码：297 / 300

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