Optical characterization of indium-rich strained In1-xGaxAs/InP single- and multiple-quantum-well structures

被引：0
|
作者：
Schwedler, R. [1 ]
Wolter, K. [1 ]
Gallmann, B. [1 ]
Gruetzmacher, D. [1 ]
Stollenwerk, M. [1 ]
Kurz, H. [1 ]
机构：
[1] Inst of Semiconductor Electronics, Aachen, Germany
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1991年 / B9卷 / 1-3期
关键词：
Crystals - Epitaxial Growth - Crystals - Strain - Optoelectronic Devices - Photoluminescence - Spectrum Analysis;
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摘要：
We report on the photoluminescence spectroscopy of a large set of strained In1-xGaxAs/InP quantum well structures grown by low pressure metallo-organic vapour phase epitaxy. Distinct peaks from monolayer steps are observed in all samples. For the first time, data on indium-rich In1-xGaxAs/InP structures with complementary gallium contents as low as xGa = 0.07 and xGa = 0.11 are reported. The sample quality appears independent of the number of quantum wells stacked in the structure. With decreasing gallium content, a decrease in luminescence intensity is observed, which is related to an increase in the number of non-radiative recombination centres with respect to lattice-matched samples.
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页码：297 / 300
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