Characterization of Schottky barrier contact between ultra thin epitaxial CoSi2/n-Si

被引：0
|
作者：
Qu, Xinping [1 ]
Ru, Guoping [1 ]
Xu, Beilei [1 ]
Li, Bingzong [1 ]
机构：
[1] Fudan Univ, Shanghai, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2000年 / 21卷 / 05期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
18
引用
收藏
页码：473 / 479
相关论文
共 50 条
  • [21] Infrared response of epitaxial and polycrystalline CoSi2 Schottky diodes
    Roca, E
    Larsen, KK
    Kolodinski, S
    Mertens, R
    MATERIALS SCIENCE AND TECHNOLOGY, 1998, 14 (12) : 1303 - 1306
  • [22] Interface structure and schottky barrier height of buried CoSi2/Si(001) layers
    Wemer, P.
    Jaeger, W.
    Schuppen, A.
    Journal of Applied Physics, 1993, 74 (06):
  • [23] EPITAXIAL-GROWTH OF COSI2 LAYER ON (100)SI AND FACET FORMATION AT THE COSI2/SI INTERFACE
    BYUN, JS
    KIM, DH
    KIM, WS
    KIM, HJ
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) : 1725 - 1730
  • [24] SURFACE-STRUCTURE OF THIN EPITAXIAL COSI2 GROWN ON SI(111)
    HELLMAN, F
    TUNG, RT
    PHYSICAL REVIEW B, 1988, 37 (18): : 10786 - 10794
  • [25] Schottky device behavior of n-Si/Pd2Si/Al and n-Si/CoSi2Al contacts with and without a Ta2N diffusion barrier
    Farooq, Mukta S.
    Muraka, Shyam P.
    Materials science & engineering. B, Solid-state materials for advanced technology, 1993, B19 (03): : 270 - 275
  • [26] EPITAXIAL-GROWTH OF COSI2 ON SI(100)
    HADERBACHE, L
    WETZEL, P
    PIRRI, C
    PERUCHETTI, JC
    BOLMONT, D
    GEWINNER, G
    THIN SOLID FILMS, 1990, 184 : 317 - 323
  • [27] EPITAXIAL-GROWTH OF COSI2/SI STRUCTURES
    BULLELIEUWMA, CWT
    APPLIED SURFACE SCIENCE, 1993, 68 (01) : 1 - 18
  • [28] EPITAXIAL-GROWTH OF COSI2 FILMS ON SI
    SAITOH, S
    ISHIWARA, H
    FURUKAWA, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C95 - C95
  • [29] CONTROL OF EPITAXIAL ORIENTATION OF SI ON COSI2(111)
    TUNG, RT
    BATSTONE, JL
    APPLIED PHYSICS LETTERS, 1988, 52 (19) : 1611 - 1613
  • [30] OPTICAL-PROPERTIES OF EPITAXIAL COSI2/SI AND COSI2 PARTICLES IN SI FROM 0.062 TO 2.76 EV
    WU, ZC
    ARAKAWA, ET
    JIMENEZ, JR
    SCHOWALTER, LJ
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (11) : 5601 - 5605
12345