Characterization of Schottky barrier contact between ultra thin epitaxial CoSi2/n-Si

被引：0
|
作者：
Qu, Xinping [1 ]
Ru, Guoping [1 ]
Xu, Beilei [1 ]
Li, Bingzong [1 ]
机构：
[1] Fudan Univ, Shanghai, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2000年 / 21卷 / 05期
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摘要：
18
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页码：473 / 479
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