4500 V planar implanted anode p-i-n junction rectifiers in 4H-SiC

被引：0
|
作者：
Fedison, J.B. [1 ]
Li, Z. [1 ]
Ramungul, N. [1 ]
Chow, T.P. [1 ]
Ghezzo, M. [1 ]
Kretchmer, J. [1 ]
Elasser, A. [1 ]
机构：
[1] Rensselaer Polytechnic Inst, Troy, United States
来源：
Annual Device Research Conference Digest | 1999年
关键词：
Aluminum - Carbon - Heterojunctions - High temperature operations - Ion implantation - Leakage currents - Semiconducting boron - Semiconducting silicon compounds - Semiconductor doping - Silicon carbide - Substrates - Thermal conductivity of solids;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The design, fabrication and electrical characterization of implanted anode 4H-SiC p-i-n rectifiers are presented. It is fabricated using aluminum/carbon/boron co-implantation designed for 5 kV blocking capability and high-temperature operation.
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页码：88 / 89
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