NO2 sensitivity of thin n-InP epitaxial layers

被引：0
|
作者：
Talazac, L. [1 ]
Blanc, J.P. [1 ]
Battut, V. [1 ]
Mollot, F. [1 ]
机构：
[1] Universite Blaise Pascal, Aubiere, France
来源：
Electron Technology (Warsaw) | 2000年 / 33卷 / 01期
关键词：
Molecular beam epitaxy - Nitrogen oxides - Semiconducting films - Semiconducting indium phosphide - Semiconductor device models - Semiconductor growth - Substrates;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A new NO2 resistive sensor using n-InP epitaxial layers grown by MBE on semi-insulating InP substrates is presented. A model based on field effect is proposed to explain interaction mechanisms and conductance variations. Simple theoretical calculations for the gas concentration dependence are in good agreement with experiments.
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页码：213 / 216
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