ZnS:Mn thin-film electroluminescent devices prepared by metallorganic chemical vapor deposition

被引：0
|
作者：
Fuji Electric Co Ltd, Nagano, Japan [1 ]
机构：
来源：
J Cryst Growth | / 1卷 / 33-39期
关键词：
The authors are grateful to Professor T. Mat-sumoto of the Faculty of Engineering; Yamanashi University for his advice on this study and also the support of photoluminescence measurement; to Professor S. Tanaka of the Electrical and Electronic Engineering Department of Tottori University for his advice on this paper; and to Mr. Taniguchi of Fuji Electric Corporate Research and Development; Ltd; for his SEM measurements;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
18
引用
收藏
相关论文
共 50 条
  • [21] MEMORY EFFECT IN ZNS - MN AC THIN-FILM ELECTROLUMINESCENT DEVICES WITH LOW MN CONCENTRATION
    MCCLEAN, IP
    THOMAS, CB
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (05) : 898 - 902
  • [22] Study of aging mechanism in ZnS:Mn thin-film electroluminescent devices grown by MOCVD
    Wang, C.W.
    Sheu, T.J.
    Su, Y.K.
    Yokoyama, M.
    Applied Surface Science, 1997, 113-114 : 709 - 713
  • [23] The study of aging mechanism in ZnS:Mn thin-film electroluminescent devices grown by MOCVD
    Wang, CW
    Sheu, TJ
    Su, YK
    Yokoyama, M
    APPLIED SURFACE SCIENCE, 1997, 113 : 709 - 713
  • [24] On nature of centers responsible for inherent memory in ZnS:Mn thin-film electroluminescent devices
    Vlasenko, NA
    Chumachkova, MM
    Denisova, ZL
    Veligura, LI
    JOURNAL OF CRYSTAL GROWTH, 2000, 216 (1-4) : 249 - 255
  • [25] DEEXCITATION PROCESSES AND EFFICIENCY IN ALE ZNS-MN THIN-FILM ELECTROLUMINESCENT DEVICES
    BENOIT, J
    BENALLOUL, P
    BARTHOU, C
    CASETTE, S
    SORET, JC
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 122 (01): : 427 - 438
  • [26] OBSERVATION OF DOUBLE LIGHT-PULSES IN THIN-FILM ZNS MN ELECTROLUMINESCENT DEVICES
    BRINGUIER, E
    GEOFFROY, A
    APPLIED PHYSICS LETTERS, 1986, 48 (26) : 1780 - 1782
  • [27] MANGANESE CONCENTRATION DEPENDENT SATURATION IN ZNS-MN THIN-FILM ELECTROLUMINESCENT DEVICES
    TORNQVIST, R
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 4110 - 4117
  • [28] EXCITATION AND RADIATIVE EFFICIENCIES IN ZNS-MN THIN-FILM ELECTROLUMINESCENT DEVICES PREPARED BY REACTIVE RADIOFREQUENCY MAGNETRON SPUTTERING
    XIAN, H
    BENALLOUL, P
    BARTHOU, C
    BENOIT, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (10): : 5801 - 5806
  • [29] SATURATION OF THE MN-2+ EMISSION IN AC ZNS-MN ELECTROLUMINESCENT THIN-FILM DEVICES
    TORNQVIST, R
    JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 399 - 402
  • [30] MN-IMPLANTED ZNS THIN-FILM ELECTROLUMINESCENT CELL
    TAKAGI, T
    YAMADA, I
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (10) : 1587 - &
12345